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參數資料
| 型號： | 114G1 |
| 英文描述： | Infrared Emitting Diodes (IRED) |
| 中文描述： | 紅外發光二極管（登記合格決定） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 30K |
| 代理商： | 114G1 |
GaAs SIDE LOOK PACKAGE
INFRARED EMITTING DIODE
Description
Package Dimensions
The MIE-114G1 is a GaAs infrared emitting diode
molded in clear , lensed side looking package .
The MIE-114G1 provides a broad range of
intensity selection .
Features
l
Selected to specific on-line intensity and
radiant intensity ranges
l
Low cost, plastic side looking package
l
Mechanically and spectrally matched to
The MID-11422 Phototransistor .
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Maximum Rating
Power Dissipation
75
mW
Peak Forward Current
1
A
Continuos Forward Current
50
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to + 100
o
C
-55
o
C to + 100
o
C
260
o
C for 5 seconds
Storage Temperature Range
Lead Soldering Temperature
02/04/2002
Unity Opto Technology Co., Ltd.
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
2.54 NOM.
(.100)
0.76±0.10
(.030±.008)
1.55±0.02
(.061±.008)
4.45±0.20
(.175±.008)
((.087)
2.22
C
1.00 MIN.
(.040)
0.50 TYP.
(.020)
Unit: mm ( inches )
SEE NOTE 3
1.22±0.10
(.048±.004)
C
A
5.72±0.20
(.225±.008)
12.70 MIN.
(.500)
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