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參數(shù)資料
| 型號： | 11EQS06 |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Forward Voltage drop Diode |
| 中文描述： | 1 A, 60 V, SILICON, SIGNAL DIODE |
| 封裝： | MINIATURE PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 24K |
| 代理商： | 11EQS06 |
SBD
FEATURES
OUTLINE DRAWING
* Low Forward Voltage Drop
* High Surge Capability
* 30volts trough 100volts Types Available
* 26mm and 52mm Inside Tape Spacing Package Available
Maximum Ratings
Approx Net Weight:0.17g
Rating
Symbol
11EQS06
Unit
V
V
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
V
RRM
V
RSM
60
65
Without Fin or
P.C.Board
P.C.Board
Mounted *
0.8
Ta=28
°
C
Average Rectified
Output Current
I
O
1.0
Ta=29
°
C
Half Sine Wave Resistive Load
A
RMS Forward Current
Surge Forward Current
Operating J unctionTemperature Range
Storage Temperature Range
Electrical
Thermal Characteristics
I
F(RMS)
I
FSM
Tjw
Tstg
1.57
A
A
°
C
°
C
25
Half Sine Wave,1cycle,Non-repetitive
- 40 to + 150
- 40 to + 150
Characteristics
Symbol
I
RM
V
FM
Conditions
Min Typ Max
-
-
-
-
Unit
mA
V
Peak Reverse Current
Peak Forward Voltage
Tj= 25
°
C, V
RM
= V
RRM
Tj= 25
°
C, I
FM
= 1 A
Without Fin or P.C.Board
1
0.58
140
110
Thermal Resistance(J unction to Ambient) Rth(j-a)P.C.Board mounted *
* :Print Lands = 5x5 mm,Both Sides
-
-
°
C/W
Type :
11E QS06
* Miniature Size
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 11EQS06 | SBD |
| 11EQS09 | SBD |
| 11EQS10 | 2-COND SHIELDED CABLE GRY |
| 11ES1 | DIODE |
| 11ES4 | Shielded Multiconductor Cable; Jacket Material:Polypropylene; Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 11EQS09 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:SBD |
| 11EQS10 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:Low Forward Voltage drop Diode |
| 11EQS10-TA2B5 | 制造商: 功能描述:SCHOTTKY BARRIER DIODE VRRM:100V, |
| 11ES1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DIODE |
| 11ES2 | 制造商:Panasonic Industrial Company 功能描述:DIODE |
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