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參數(shù)資料
| 型號(hào)： | 11N60S5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:White/Green; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 335K |
| 代理商： | 11N60S5 |
2004-03-30
Rev. 2.1
Page 1
SPP11N60S5, SPB11N60S5
SPI11N60S5
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Improved transconductance
V
DS
R
DS(on)
I
D
600
0.38
V
A
11
P-TO262
P-TO220-3-1
P-TO263-3-2
2
P-TO220-3-1
23
1
Type
SPP11N60S5
Package
P-TO220-3-1
Ordering Code
Q67040-S4198
SPB11N60S5
P-TO263-3-2
Q67040-S4199
SPI11N60S5
P-TO262
Q67040-S4338
Marking
11N60S5
11N60S5
11N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 5.5 A,
V
DD
= 50 V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
I
D
= 11 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage
I
D
11
7
I
D puls
E
AS
22
340
mJ
E
AR
0.6
11
A
V
GS
V
GS
P
tot
T
j ,
T
stg
±20
±
30
125
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
-55... +150
°C
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