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參數(shù)資料
| 型號(hào)： | FM5821-ALN |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | CONNECTOR,HEADER,20P,2X10,2MMCTR,ST,SMD |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 70K |
| 代理商： | FM5821-ALN |
FM5820-ALN THRU FM5822-ALN
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizng Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.15 gram
(V)
(V)
(V)
(V)
(
o
C)
FM5820-ALN
SK32
20
14
20
0.475
FM5821-ALN
SK33
30
21
30
0.500
FM5822-ALN
SK34
40
28
40
0.525
SYMBOLS
MARKING
CODE
-55 to +125
Storage
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
80
A
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
20
mA
Thermal resistance
Junction to ambient
R
q
JA
80
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
250
pF
Operating temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
0.040(1.0) Typ.
0.067(1.7)
0.053(1.3)
Dimensions in inches and (millimeters)
SMA-LN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM5822-AN | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5820-AN | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5821-AN | SMT .1" PITCH SINGLE VERTICAL ROW 2 PIN HEADER SMT |
| FM5822-A | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM600TU-07A | HIGH POWER SWITCHING USE INSULATED PACKAGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM5821-AN | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5821B | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes |
| FM5821L | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Ampere |
| FM5821-W | 功能描述:肖特基二極管與整流器 3A 30V 0.5vF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| FM5822 | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) SM Schot Bar Rect SMC,3A,40V.0.525vF RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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