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參數資料
| 型號： | 12N035T |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Field Effect Transistor |
| 中文描述： | N溝道場效應晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 42K |
| 代理商： | 12N035T |
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com
N-Channel Field Effect Transistor
12N035
Ordering Information
Device
12N035T
12N035S
Package
TO-220
TO-263 ( D
2
)
Temp.
0 to 150
°
C
0 to 150
°
C
Absolute Maximum Rating
Symbol
I
D
Parameter
Max
12
36
30
±
20
50
0.4
-65 to 175
Unit
Drain Current
-Continues
-Pulsed
Drain-Source Voltage
Gate Source Voltage
Total Power Dissipation @ T
C
=25
°
C
Derate above 25
°
C
Operating and Storage
Temperature Range
A
V
DSS
V
GSV
P
D
V
V
W
W/
°
C
°
C
T
J
T
STG
Description
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for low voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
2
surface
mount power package with a power dissipation up to 2 Watts
Features
Critical DC Electrical parameters
specified at elevated Temp.
Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
Super high density cell design for
extremely low R
DS(ON)
V
DSS
= 30V
R
DS (ON)
= 0.045
I
D
= 12A
Bay Linear
Inspire the Linear Power
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