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參數資料
| 型號： | 134G2 |
| 英文描述： | Infrared Emitting Diodes (IRED) |
| 中文描述： | 紅外發光二極管（登記合格決定） |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 134G2 |
GaAs/GaAs SIDE LOOK PACKAGE
INFRARED EMITTING DIODE
MIE-134G2
Description
Package Dimensions
The MIE-134G2 is a GaAs infrared emitting diode
molded in clear, lensed side looking package.
The MIE-134G2 provides a broad range of
intensity selection .
Features
l
Selected to specific on-line intensity and
radiant intensity ranges
l
Low cost, plastic side looking package
l
Mechanically and spectrally matched to
The MID-13A45 of phototransistor .
Absolute Maximum Ratings
@ TA=25
oC
Parameter
Maximum Rating
Unit
Power Dissipation
75
mW
Peak Forward Current(300pps,10
s pulse)
1
A
Continuos Forward Current
50
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
oC to +100oC
Storage Temperature Range
-55
oC to +100oC
Lead Soldering Temperature
260
oC for 5 seconds
11/17/2000
Unity Opto Technology Co., Ltd.
Unit: mm( inches )
NOTES :
1. All dimensions are in millimeters.
2. Tolerance is ± 0.25mm unless otherwise noted .
3. Lead spacing is measured where the leads emerge from the package.
0.25max
(.010)
2.45±0.10
(.080±.004)
Pin # Name
1
Cathode
2
Anode
3
Open
1
2
3
2.50±0.30
(.099±.012)
1.70
±
0.10
(.067±.004)
7.60
(.299)
9.60
(.378)
1.25
(.049)
1.25
(.049)
3.00*0.5
(.118)
3.09±0.10
(.154±.004)
3.70±0.10
(.146±.004)
2.00max
(.078)
0.25max
(.010)
0.80±0.10
(.032±.004)
2.05
(.081)
R1.1
0.50max
(.020)
0.30max
(.012)
1
3
4.00
±
0.10
(.158±.004)
4.00±0.10
(.158±.004)
2.00±0.10
(.078±.004)
5.10±0.10
(.200±.004)
2
2.00±0.10
(.078±.004)
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