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參數資料
| 型號： | 1416-200 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 311K |
| 代理商： | 1416-200 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1416 - 100
100 Watts - 50 Volts, Pulsed
Radar 1400 - 1600 MHz
GENERAL DESCRIPTION
The 1416-100 is an internally matched, COMMON BASE transistor capable
of providing 100 Watts of pulsed RF output power at one microsecond pulse
width, ten percent duty factor across the band 1400-1600 MHz. This
hermetically solder-sealed transistor is specifically designed for short pulse
radar applications. It utilizes gold metalization and diffused emitter ballasting
to provide high reliability and supreme ruggedness.
CASE OUTLINE
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 564 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 55 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 10 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1400-1600 MHz
Vcc = 50 Volts
Pulse Width =1.0
μ
s
Duty = 10%
F=1600MHz, Po=100W
100
6.5
7.0
40
20
10:1
Watts
Watts
dB
%
BVces
BVebo
BVcbo
Hfe
θ
jc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Emitter to Base Breakdown
DC Current Gain
Thermal Resistance
Ic = 10 mA
Ie = 10 mA
Ic = 10 mA
Vce = 5 V, Ic = 100mA
Rated Pulse Condition
55
3.0
65
5.0
0.31
Volts
Volts
Volts
C/W
o
Issue August 1996
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