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參數資料
| 型號： | 1528-8 |
| 廠商： | 意法半導體 |
| 英文描述： | ECON FO CERAMIC 62.5 PVC ST/LC 2M |
| 中文描述： | 射頻 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 62K |
| 代理商： | 1528-8 |
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 SQ. 2LFL (M105)
hermetically sealed
.
DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.
20 WATTS (typ.) IFF 1030 - 1090 MHz
.
15 WATTS (min.) DME 1025 - 1150 MHz
.
15 WATTS (typ.) TACAN 960 - 1215 MHz
.
10 dB MIN. GAIN
.
REFRACTORY GOLD METALLIZATION
.
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE
.
20:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.
INPUT MATCHED, COMMON BASE
CONFIGURATION
DESCRIPTION
The SD1528-08 is a gold metallized, silicon NPN
power transistor. The SD1528-08 is designed for
applications requiring high peak power and low
duty cycles such as IFF, DME and TACAN. The
SD1528-08 ispackaged in the .250” input matched
hermetic stripline flange package resulting in im-
proved broadband performance and a low thermal
resistance.
PIN CONNECTION
BRANDING
1528-8
ORDER CODE
SD1528-08
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
65
65
3.5
V
V
V
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
1.5
87.5
+200
A
W
°
C
°
C
65 to +150
R
TH(j-c)
Junction-Case Thermal Resistance
2.0
°
C/W
SD1528-08
1. Collector
2. Base
3. Emitter
THERMAL DATA
November 1992
1/4
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