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參數資料
| 型號： | 15KPA33AE3/TR13 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 146K |
| 代理商： | 15KPA33AE3/TR13 |
15000W Transient Voltage Suppressor (TVS) protection device
www.Microsemi.com
1/6
Copyright
2009
Aug Rev A
15KPA17e3 to 15KPA280CAe3
Main product characteristics
Description and applications
This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or
radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response
time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from
ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can
also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class
levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands
and special applications.
RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)
Qualified to automotive grade – AEC Q101
Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions.
Maximum ratings and characteristics
(1)
Symbol
Parameter
Value
Unit
PPPM
Peak power dissipation with a 10/1000s waveform (fig. 1)
Min. 15000
W
IPPM
Peak pulse current with a 10/1000s waveform (2)
See next table
A
PM(AV)
Steady state power dissipation at TL = 75C, lead lengths
0.375” (9.5mm) (3)
8.0
W
IFSM
Non repetitive peak forward surge current
(8.3ms single half sine wave) (4)
400
A
RΘJL
Typical thermal resistance junction to lead
8.0
C/W
RΘJA
Typical thermal resistance junction to ambient
40
C/W
TSTG
Storage temperature
-55 to +175
C
TJ
Junction temperature
-55 to +175
C
(1) All ratings at 25C unless specified otherwise
(2) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25C per Fig. 2
(3) Mounted as shown in Fig.5
(4) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
VWM
17V – 280V
VBR(min)
19V – 312V
IPP
515A – 33A
VCL(MAX)
29.3V – 454.5V
PPP
15000W
P600
HALOGEN
FREE
RoHS
COMPLIANT
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相關代理商/技術參數 |
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| 15KPA33A-HR | 功能描述:TVS DIODE 33VWM 54.7VC AXIAL 制造商:littelfuse inc. 系列:15KPA-HR 包裝:帶卷（TR） 零件狀態:在售 類型:齊納 單向通道:1 電壓 - 反向關態（典型值）:33V 電壓 - 擊穿（最小值）:36.9V 電壓 - 箝位（最大值）@ Ipp:54.7V 電流 - 峰值脈沖（10/1000μs）:276.1A 功率 - 峰值脈沖:15000W（15kW） 電源線路保護:無 應用:通用 不同頻率時的電容:- 工作溫度:-55°C ~ 175°C（TA） 安裝類型:通孔 封裝/外殼:P600，軸向 供應商器件封裝:P600 標準包裝:800 |
| 15KPA33A-HRA | 功能描述:TVS DIODE 33VWM 54.7VC AXIAL 制造商:littelfuse inc. 系列:15KPA-HRA 包裝:帶卷（TR） 零件狀態:在售 類型:齊納 單向通道:1 電壓 - 反向關態（典型值）:33V 電壓 - 擊穿（最小值）:36.9V 電壓 - 箝位（最大值）@ Ipp:54.7V 電流 - 峰值脈沖（10/1000μs）:276.1A 功率 - 峰值脈沖:15000W（15kW） 電源線路保護:無 應用:通用 不同頻率時的電容:- 工作溫度:-55°C ~ 175°C（TA） 安裝類型:通孔 封裝/外殼:P600，軸向 供應商器件封裝:P600 標準包裝:800 |
| 15KPA33A-LF | 制造商:ProTek Devices 功能描述:Diode TVS Single Uni-Dir 33V 15KW 2-Pin |
| 15KPA33ATR | 功能描述:TVS DIODE 33VWM 54.7VC P-600 制造商:smc diode solutions 系列:- 包裝:帶卷（TR） 零件狀態:有效 類型:齊納 單向通道:1 雙向通道:- 電壓 - 反向關態（典型值）:33V 電壓 - 擊穿（最小值）:36.9V 電壓 - 箝位（最大值）@ Ipp:54.7V 電流 - 峰值脈沖（10/1000μs）:276.1A 功率 - 峰值脈沖:15000W（15kW） 電源線路保護:無 應用:通用 不同頻率時的電容:- 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:通孔 封裝/外殼:P600，軸向 供應商器件封裝:P600 標準包裝:800 |
| 15KPA33-B | 制造商:Littelfuse 功能描述:TVS DIODE 33VWM 57.44VC AXIAL 制造商:Littelfuse 功能描述:DIODE TVS 15000W 33V 10% UNI AXL |
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