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參數資料
| 型號： | 1617-35 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | COMPUTER PRODUCT |
| 中文描述： | 35瓦，28伏特，脈沖雷達1640至60年兆赫 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 14K |
| 代理商： | 1617-35 |
R.1.A.990106-HERIC
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1617-35
35 Watts, 28 Volts, Pulsed
Radar 1540 - 1660 MHz
ADVANCED ISSUE
GENERAL DESCRIPTION
The 1617-35 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1540 – 1660 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces junction
temperature, extends life.
CASE OUTLINE
55AT
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25
°
C
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
Emitter to Base Voltage (BV
ebo
)
Collector Current (I
c
)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
290 W
50 V
3.0 V
6 A
-65 to +200
°
C
+200
°
C
ELECTRICAL CHARACTERISTICS @ 25
°
C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
P
out
P
in
P
g
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1660 MHz
Vcc = 28 Volts
PW = Note 1
DF = Note 1
F = 1540 MHz
35
W
W
dB
%
6
7.6
50
10:1
FUNCTIONAL CHARACTERISTICS @ 25
°
C
BV
ebo
BV
ces
h
FE
θ
jc
2
NOTE 1: 5
μ
s at 15% Duty
2. At rated pulse conditions
.
Initial Issue May 1999
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 20 mA
Ic = 60 mA
Vce = 5V, Ic = 500mA
3.0
50
20
V
V
0.6
°
C/W
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