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參數資料
| 型號： | 16AM08 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 278K |
| 代理商： | 16AM08 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
16AM08
8 Watts, 18 Volts, Class A
Linear 1500 - 1700 MHz
GENERAL DESCRIPTION
The 16AM08 is a COMMON EMITTER, HIGH GAIN transistor capable of
providing 8 Watts , P
, Class A, RF output power in the band 1500 - 1700
1dB.
MHz. The transistor includes double input and output prematching for full
broadband capability. Gold metalization and diffused ballasting are used to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55AW, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
35 Watts
o
Maximum Voltage and Current
BVcbo
Collector to Base Voltage
45 Volts
BVceo
Collector to Emitter Voltage
25 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
4.0 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 200 C
o
Operating Junction Temperature
+ 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
Pout - 1dB
Pin
Pg - 1dB
VSWR
Power Out - 1 dB
Power Input
Power Gain
Load Mismatch Tolerance
F = 1700 MHz
Vcc = 22 Volts
Icq = 1.2 Amps
Pout = 8 Watts
8
7
5 : 1
1.6
Watts
dB
BVcbo
BVceo
BVebo
Icbo
H
fe
θjc
Collector to Base Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector to Base Leakage
Current Gain
Thermal Resistance
Ic = 50 mA
Ie = 8.0 mA
Vcb = 20 V
Vce = 5 V, Ic = 0.8A
Tc = 25 C
o
45
25
3.5
20
4.0
6.0
120
5.0
Volts
mA
C/W
o
Issue January 1996
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