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參數資料
| 型號： | 1718-32L |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 179K |
| 代理商： | 1718-32L |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1718-32L
32 Watt - 24 Volts, Class C
Microwave 1750 - 1850 MHz
GENERAL DESCRIPTION
The 1718-32L is a COMMON BASE transistor capable of providing 32
Watts of Class C, RF output power over the band 1750-1850 MHz. This
transistor is designed for Microwave Broadband Class C amplifier
applications. It includes Input and Output prematching and utilizes Gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness. The transistor uses a fully hermetic High Temperature Solder
sealed package.
CASE OUTLINE
55KT - STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 117 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 12 A
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1750-1850 MHz
Vcb = 24 Volts
Pin = 7 Watts
As Above
F = 1750 MHz, Pin = 7 W
32
6.5
7.0
40
7
3:1
Watt
Watt
dB
%
BVces
BVebo
H
Cob
θ
jc
* Not measureable due to Output Prematch within the package
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance *
Thermal Resistance
Ic = 20 mA
Ie = 15 mA
Vce = 5 V, Ic = 500 mA
F = 1 MHz, Vcb = 28V
50
3.5
10
100
1.5
Volts
Volts
pF
C/W
o
Issue January 1996
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