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參數資料
| 型號： | 1719-8 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 71K |
| 代理商： | 1719-8 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1719-2
2 Watts, 22 Volts, Class C
Microwave 1700 - 1900 MHz
GENERAL DESCRIPTION
The 1719-2 is a COMMON BASE transistor capable of providing 2 Watts,
Class C output power over the band 1750-1850 MHz. The transistor includes
input prematching for full Broadband capabiliy. Gold metalizaton and
diffused ballasting are used to provide high reliability and supreme
ruggedness. The transistor uses a fully hermetic High Temperature Solder
Sealed package.
CASE OUTLINE
55LV, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 11.6 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 45 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 0.5 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
1
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 1750 -1850 MHz
Vcc = 22 Volts
Pout = 8.0 Watts
2.0
7.0
40
.355
10:1
Watts
Watts
dB
%
BVces
BVebo
Hfe
Cob
θ
jc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 10 mA
Ie = 5 mA
Vce = 5V, Ic = 200 mA
Vcb = 22V, F = 1 MHz
Tc = 25 C
45
3.5
20
5.5
120
15
Volts
Volts
pF
C/W
o
Issue June 28, 1996
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