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BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1920A05
5 Watts, 26 Volts, Class A
Personal 1930 - 1990 MHz
GENERAL DESCRIPTION
The 1920A05 is a COMMON EMITTER transistor capable of providing
5 Watts of Class A, RF output power over the band 1930-1990 MHz. This
transistor is specifically designed for
PERSONAL COMMUNICATIONS
BASE STATION
LINEAR
amplifier applications. It includes Input
prematching and utilizes Gold metalization and HIGH VALUE EMITTER
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55CT, STYLE 2
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 35 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 55 Volts
LVceo Collector to Emitter Voltage 27 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 3.5 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
IMD
3
η
c
VSWR
1
Power Out
Power Input
Power Gain
Intermodulation Distortion
Collector Efficiency
Load Mismatch Tolerance
F =1930 - 1990 MHz
Vce = 26 Volts
Icq = 600 mAmps
As Above
At P1dB
5
11
12
30
.4
3:1
Watt
Watt
dB
dB
%
BVces
LVceo
BVebo
Ices
h
Cob
θ
jc
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance
Ic = 50 mA
Ic = 50 mA
Ie = 10 mA
Vce = 27 Volts
Vce = 5 V, Ic = 0.5 A
F =1 MHz, Vcb = 28 V
Tc = 25 C
55
27
3.5
20
10
100
5.0
Volts
Volts
Volts
mA
pF
C/W
o
Issue February 1996