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參數資料
| 型號： | 1951A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | Medium Power Microwave MESFET |
| 中文描述： | 中等功率微波場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 28K |
| 代理商： | 1951A |
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF1951A
Medium Power Microwave MESFET
MITSUBISHI
(1/4)
1 Aug 2002
PRELIMINARY
DESCRIPTION
The MGF1951A is a 20mW MESFET for S- to Ku-band
driver amplifiers and oscillators.
Its lead-less ceramic package assures minimum parasitics.
FEATURES
High Gain and High Output Power
G
LP
=9dB, P
1dB
=13dBm (typ) @ f=12GHz
Leadless Ceramic Package
APPLICATION
S- to Ku-Band Driver Amplifiers and Oscillators
QUALITY
General Grade
ORDERING INFORMATION
Part Number
MGF1951A-01
Quantity
3.000 pcs/reel
Supply Form
Tape & Reel
ABSOLUTE MAXIMUM RATINGS
(T
a
=+25°C)
Symbol
Parameter
Rating
Unit
V
GDO
V
GSO
I
D
P
T
T
ch
T
stg
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
-8
-8
120
300
125
V
V
mA
mW
°C
°C
-65 to +125
ELECTRICAL CHARACTERISTICS
(T
a
=+25°C)
Symbol
Parameter
Test Conditions
MIN
TYP
MAX
Unit
V
(BR)GDO
I
DSS
V
GS(off)
Gate to Drain Breakdown Voltage
Saturated Drain Current
Gate to Source Cut-off Voltage
Output Power at
1dB Gain Compression
I
G
=-30μA
V
DS
=3V, V
GS
=0V
V
DS
=3V, I
D
=300μA
-8
35
-0.3
-15
60
-1.4
—
120
-3.5
V
mA
V
P
1dB
V
DS
=3V, I
D
=30mA, f=12GHz
11
13
—
dBm
G
LP
Linear Power Gain
V
DS
=3V, I
D
=30mA, P
in
=-5dBm,
f=12GHz
7
9
—
dB
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the
maximum effort into making semiconductor
products better and more reliable, but there is
always the possibility that trouble may occur
with them. Trouble with semiconductors may
lead to personal injury, fire or property
damage.
Remember
consideration to safety when making your
circuit designs, with appropriate measure
such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or
(iii) prevention against any malfunction or
mishap.
to
give
due
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