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參數資料
| 型號： | 1A5 |
| 英文描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 300MA I(C) | SOT-172A1 |
| 中文描述： | 晶體管|晶體管|叩| 50V五（巴西）總裁| 300mA的一（c）|的SOT - 172A1 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 40K |
| 代理商： | 1A5 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1A5/1A5A
0.5 Watts, 20 Volts, Class A
Linear to 1000 MHz
GENERAL DESCRIPTION
The 1A5/1A5A is a COMMON EMITTER transistor capable of providing 0.5
Watt of Class A, RF output power to 1000 MHz. This transistor is specifically
designed for general Class A amplifier applications. It utilizes gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness.
CASE OUTLINE
1A5 - 55ET, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 5.3 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 300 mAmps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 150 C
1A5A - 55EU, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
Ft
VSWR
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
F = 1000 MHz
Ic = 140 mA
Vcc = 20 Volts
Vce = 20 V, Ic = 140 A
0.5
7.0
3.4
0.8
9.0
3.7
0.1
30:1
Watts
Watts
dB
GHz
BVebo
BVces
BVceo
h
Cob
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Capacitance
Thermal Resistance
Ie = 1 mA
Ic =10 mA
Ic = 10 mA
Vce = 5 V, Ic = 100 mA
Vcb = 28V, f = 1 MHz
3.5
50
22
20
2.0
3.0
33
Volts
Volts
Volts
pF
C/W
o
Issue August 1996
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