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參數資料
| 型號： | 1F3G |
| 廠商： | RECTRON LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | FAST RECOVERY GLASS PASSIVATED RECTIFIER |
| 中文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, R-1, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 25K |
| 代理商： | 1F3G |
FAST RECOVERY
GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Fast switching
* Low leakage
* Low forward voltage drop
* High current capability
* High currenf surge
* High reliability
* Glass passivated junction
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.19 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
1F1G
THRU
1F7G
R-1
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
NOTES :
1. Reverse Recovery Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
Dimensions in inches and (millimeters)
2001-5
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 25
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
1F1G
1F2G
1F3G
1F4G
1F5G
1F6G
1F7G
UNITS
50
35
50
100
70
100
400
280
400
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
420
600
600
1.0
25
15
-65 to + 175
Amps
pF
0
C
200
140
200
at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Full Load Reverse Current Full Cycle Average,
.375” (9.5mm) lead length at T
L
= 55
o
C
Maximum Reverse Recovery Time (Note 1)
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
1F1G
1F2G
1F3G
1F4G
1.3
1F5G
1F6G
1F7G
UNITS
Volts
5.0
100
150
250
500
uAmps
uAmps
nSec
Maximum DC Reverse Current
Maximum Instantaneous Forward Voltage at 1.0A DC
.787 (20.0)
MIN.
.106 (2.7)
.126 (3.2)
.787 (20.0)
MIN.
.102 (2.6)
.091 (2.3)
DIA.
.021 (0.55)DIA.
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| 1F3TA | 功能描述:DIODE GEN PURP 200V 1A R-1 制造商:smc diode solutions 系列:- 包裝:帶卷（TR） 零件狀態:有效 二極管類型:標準 電壓 - DC 反向（Vr）（最大值）:200V 電流 - 平均整流（Io）:1A 不同 If 時的電壓 - 正向（Vf）:1.3V @ 1A 速度:快速恢復 = 200mA（Io） 反向恢復時間（trr）:150ns 不同?Vr 時的電流 - 反向漏電流:5μA @ 200V 不同?Vr，F 時的電容:15pF @ 4V，1MHz 安裝類型:通孔 封裝/外殼:R-1（軸向） 供應商器件封裝:R-1 工作溫度 - 結:-65°C ~ 150°C 標準包裝:5,000 |
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