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參數資料
| 型號： | 1HN04CH |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 中文描述： | N溝道MOSFET的硅通用開關器件應用 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 61K |
| 代理商： | 1HN04CH |
1HN04CH
No. A0925-1/4
Features
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
mA
mA
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
100
±
20
120
480
0.6
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm)
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=
±
16V, VDS=0V
VDS=10V, ID=100
μ
A
VDS=10V, ID=60mA
ID=60mA, VGS=10V
ID=30mA, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
100
V
μ
A
μ
A
V
mS
1
±
10
2.6
1.2
100
175
6.1
Static Drain-to-Source On-State Resistance
8.0
9.8
7
pF
pF
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : LB
19
2.6
1.3
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0925
90507PE TI IM TC-00000810
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
1HN04CH
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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| 1HP04CH | P-Channel Silicon MOSFET General-Purpose Switching Device |
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| 1JH46 | FAST RECOVERY (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
| 1JU41 | RECTIFIER (HIGH SPEED RECTIFIER APPLICATIONS) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 1HN04CH-TL-W | 功能描述:MOSFET N-CH 100V 0.27A SOT-23 制造商:on semiconductor 系列:- 包裝:剪切帶（CT） 零件狀態:有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:邏輯電平柵極，4V 驅動 漏源極電壓（Vdss）:100V 電流 - 連續漏極（Id）（25°C 時）:270mA（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:8 歐姆 @ 140mA，10V 不同 Id 時的 Vgs（th）（最大值）:2.6V @ 100μA 不同 Vgs 時的柵極電荷（Qg）:0.9nC @ 10V 不同 Vds 時的輸入電容（Ciss）:15pF @ 20V 功率 - 最大值:600mW 工作溫度:150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商器件封裝:3-CPH 標準包裝:1 |
| 1HN471U | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 1HNK60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET |
| 1HNK60R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET |
| 1HP04CH | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
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