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參數資料
| 型號： | 1MBI150SH-140 |
| 廠商： | FUJI ELECTRIC HOLDINGS CO., LTD. |
| 英文描述： | 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | 暫定目標規格 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 151K |
| 代理商： | 1MBI150SH-140 |
IGBT MODULE ( N series )
I
Features
Square RBSOA
Low Saturation Voltage
Overcurrent Limiting Function (
~3
Times Rated Current)
I
Outline Drawing
I
Maximum Ratings and Characteristics
Absolute Maximum Ratings
( T
c
=25°C
)
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Symbols
V
CES
V
GES
I
C
I
C PULSE
-I
C
-I
C PULSE
P
C
T
j
T
stg
V
is
Mounting *1
Terminals *1
Note:
*1:Recommendable Value; 2.5
～
3.5 Nm (M5)
Ratings
600
±
20
150
300
150
300
600
+150
-40
～
+125
2500
3.5
3.5
Units
V
V
Continuous
1ms
Continuous
1ms
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
W
°C
°C
V
A.C. 1min.
Electrical Characteristics
( at T
j
=25°C )
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
I
RRM
Test Conditions
V
GE
=0V V
CE
=600V
V
CE
=0V V
GE
=
±
20V
V
GE
=20V I
C
=150mA
V
GE
=15V I
C
=150A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=300V
I
C
=150A
V
GE
=
±
15V
R
G
=16
I
F
=150A V
GE
=0V
I
F
=150A
V
R
=600V
Min.
Typ.
Max.
1.0
15
7.5
2.8
Units
mA
μ
A
V
V
4.5
9900
2200
1000
0.6
0.2
0.6
0.2
pF
1.2
0.6
1.0
0.35
3.0
300
1.0
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Currrent
V
ns
mA
Thermal Characteristics
Items
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Min.
Typ.
Max.
0.21
0.47
Units
IGBT
Diode
With Thermal Compound
Thermal Resistance
°C/W
0.05
I
Equivalent Circuit
Screw Torque
Turn-on Time
Turn-off Time
μ
s
A
Nm
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