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參數(shù)資料
| 型號(hào)： | 1N 6263 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Small Signal Schottky Diode(小信號(hào)肖特基二極管) |
| 中文描述： | 小信號(hào)肖特基二極管（小信號(hào)肖特基二極管） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 61K |
| 代理商： | 1N 6263 |
1N 6263
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection
and pulse application with broad dynamic range.
November 1994
DO 35
(Glass)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive Peak Reverse Voltage
60
V
I
F
Forward Continuous Current*
T
a
= 25
°
C
15
mA
I
FSM
Surge non Repetitive Forward Current*
t
p
≤
1s
50
mA
T
stg
T
j
Storage and Junction Temperature Range
- 65 to 200
- 65 to 200
°
C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230
°
C
ABSOLUTE RATINGS (limiting values)
Symbol
R
th(j-a)
Test Conditions
Value
400
Unit
°
C/W
Junction-ambient*
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
** Pulse test: t
≤
300
μ
s
δ
<
2%
.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
BR
T
amb
= 25
°
C
I
R
= 10
μ
A
60
V
V
F
* *
T
amb
= 25
°
C
I
F
= 1mA
0.41
V
T
amb
= 25
°
C
I
F
= 15mA
1
I
R
* *
T
amb
= 25
°
C
V
R
= 50V
0.2
μ
A
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
C
τ
Test Conditions
V
R
= 0V
I
F
= 5mA
Min.
Typ.
Max.
2.2
100
Unit
pF
ps
T
amb
= 25
°
C
T
amb
= 25
°
C
f = 1MHz
Krakauer Method
DYNAMIC CHARACTERISTICS
1/3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6263 HP | 制造商:HP 功能描述:1N6263 |
| 1N6263 SGS | 制造商:SGS 功能描述:1N6263 |
| 1N6263 | 制造商:STMicroelectronics 功能描述:DIODE SCHOTTKY RF |
| 1N6263-B | 制造商:Zetex / Diodes Inc 功能描述:SCHOTTKY DIODE |
| 1N6263C | 制造商:. 功能描述: |
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