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參數資料
| 型號： | 1N19 |
| 廠商： | RECTRON LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCHOTTKY BARRIER RECTIFIER |
| 中文描述： | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | ROHS COMPLIANT, PLASTIC, R-1, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 23K |
| 代理商： | 1N19 |
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Low power loss, high efficiency
* Low leakage
* Low forward voltage
* High current capability
* High speed switching
* High surge capabitity
* High reliability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.12 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
R-1
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
NOTES :
1. Thermal Resistance (Junction to Ambient): Vertical PC Board Mounting, 0.5” (12.7mm) Lead Length.
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
2001-6
1N17
THRU
1N19
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375” (9.5mm) lead length at T
L
= 90
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
Storage and Operating Temperature Range
SYMBOL
V
RRM
V
DC
I
FSM
C
J
T
J
, T
STG
V
RMS
UNITS
Volts
20
Volts
Volts
Amps
14
28
40
1.0
20
80
110
Amps
0
C/W
pF
0
C
30
21
R
θ
JA
I
O
-65 to + 150
20
30
40
1N17
1N18
1N19
CHARACTERISTICS
Maximum Average Reverse Current at
Peak Reverse Voltage
V
F
V
F
SYMBOL
I
R
UNITS
mAmps
Volts
Maximum Forward Voltage at 3.1A DC
Maximum Forward Voltage at 1.0A DC
Volts
1.0
1N17
1N18
1N19
.45
.75
.55
.875
.60
.90
10
@T
A
= 25
@T
A
= 100
o
C
o
C
.787 (20.0)
MIN.
.106 (2.7)
.126 (3.2)
.787 (20.0)
MIN.
.102 (2.6)
.091 (2.3)
DIA.
.025 (0.65)
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PDF描述 |
|---|---|
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| 1N19 | 1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts |
| 1N2153 | Standard Rectifier (trr more than 500ns) |
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| 1N194 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:silicon diode |
| 1N195 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:silicon diode |
| 1N1956B | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:Ref/Reg Diode |
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