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參數(shù)資料
| 型號(hào)： | 1N4003 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 238K |
| 代理商： | 1N4003 |
21201 Itasca St.
Chatsworth, CA 91311
Phone: (818) 701-4933
Fax:
(818) 701-4939
1N4001
thru
1N4007
1 Amp Rectifier
50 - 1000 Volts
DO-41
Features
Low Current Leakage
Metallurgical Bonded Construction
Low Cost
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.166
.205
4.10
5.20
B
.080
.107
2.00
2.70
C
.028
.034
.70
.90
D
1.000
---
25.40
---
Maximum Ratings
Operating Temperature: -50
°C to +175°C
Storage Temperature: -50
°C to +175°C
Maximum Thermal Resistance; 20
°C/W Junction To Lead
Microsemi
Part Number
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS Voltage
Maximum DC
Blocking
Voltage
1N4001
50V
35V
50V
1N4002
100V
70V
100V
1N4003
200V
140V
200V
1N4004
400V
280V
400V
1N4005
600V
420V
600V
1N4006
800V
560V
800V
1N4007
1000V
700V
1000V
Electrical Characteristics @ 25
°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A
TA = 75
°C
Peak Forward Surge
Current
IFSM
30A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
VF
1.1V
IFM = 1.0A;
TJ = 25
°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
5.0
A
50
A
TJ = 25
°C
TJ = 125
°C
Typical Junction
Capacitance
CJ
15pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300
sec, Duty cycle 2%
A
B
C
D
Cathode
Mark
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4003- | 制造商:TAIW 功能描述:General Purpose 200V Through Hole Rectifier DO-41 1.0A |
| 1N4003 TR | 制造商:NONE 功能描述: |
| 1N4003 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N4003 BK | 功能描述:DIODE GEN PURPOSE DO41 制造商:central semiconductor corp 系列:* 零件狀態(tài):生命周期結(jié)束 標(biāo)準(zhǔn)包裝:2,000 |
| 1N4003 BULK | 制造商:ROHM 功能描述:General Purpose 200V Through Hole Rectifier DO-41 1A |
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