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參數資料
型號: 1N4004S
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 1 A, 400 V, SILICON, SIGNAL DIODE
封裝: ROHS COMPLIANT, PLASTIC, A-405, 2 PIN
文件頁數: 1/2頁
文件大小: 61K
代理商: 1N4004S
PAGE . 1
July 22,2010-REV.02
1N4001S~1N4007S
FEATURES
Low forward voltage drop
High current capability
High reliability
High surge current capability
Exceeds environmental standards of MIL-S-19500/228
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: A-405 Molded plastic
Epoxy: UL 94V-O rate flame retardant.
Lead: Axial leads, solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.008 ounces, 0.22 gram
PLASTIC SILICON RECTIFIERS
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Thermal Resistance from Junction to Ambient and from junction to lead at 0.375”(9.5mm)lead length P.C.B.mounted.
.025(.64)
.107(2.7)
.021(.53)
.080(2.0)
1.
0(
25
.4
)M
IN
.
1.
0(
25
.4
)M
IN
.
.20
5(
5.
2)
.16
0(
4.
1)
A-405
Unit: inch(mm)
VOLTAGE
50 to 1000 Volts
CURRENT
1.0 Amperes
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load,derate current by 20%.
PA RA M E TE R
S YM B OL 1N4001S 1N4002S 1 N4003S 1N4004S 1N4005S 1N4006S 1N4007S UNITS
M a xi m um Re curre nt P eak Re ve rs e Vo ltage
V
RRM
50
10 0
200
400
600
800
1000
V
Ma xi mum RM S Vo lta g e
V
RMS
35
70
140
280
420
560
700
V
Ma xi mum D C B lo c k i ng Vo lta g e
V
DC
50
10 0
200
400
600
800
1000
V
M a xi m um A verage Forward C ur rent .375 " (9.5m m ) lead le ng th at
T
A =7 5
OC
I
F(AV )
1.0
A
P eak Fo rward S urge C ur rent : 8.3m s si ng le ha lf si ne -wave
superi m posed on ra te d load (J E D E C m e thod)
I
FS M
30
A
M a xi m um Forward Vo ltage at 1.0A
V
F
1.1
V
M a xi m um D C Re ve r s e C ur rent at Ra ted D C B loc ki ng
Vo ltage
T
J=2 5
OC
T
J= 100
OC
I
R
5.0
500
μA
Typi cal Junc ti on c apa c i ta nc e (Note 1)
C
J
15
pF
Typi cal Therm a l Re si s tance (Note 2)
R
θJA
R
θJC
R
θJL
50
25
17
OC /
W
Operati ng Junc ti on and S torage Te mp e rature Ra ng e
T
J ,T STG
-55 to +150
OC
相關PDF資料
PDF描述
1N4002W 1 A, 100 V, SILICON, SIGNAL DIODE
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