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參數資料
| 型號： | 1N400X |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Leaded rectifier diode max. Tj = 150 °C; |
| 中文描述： | 含鉛整流器二極管 Tjmax=170℃ |
| 文件頁數： | 1/2頁 |
| 文件大小： | 28K |
| 代理商： | 1N400X |
DS28002 Rev. E-2
1 of 2
1N4001/L-1N4007/L
Features
Diffused Junction
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 30A Peak
Low Reverse Leakage Current
Plastic Material: UL Flammability
Classification Rating 94V-0
1N4001/L - 1N4007/L
1.0A RECTIFIER
“L” Suffix Designates A-405 Package
No Suffix Designates DO-41 Package
A
A
B
C
D
DO-41 Plastic
Min
25.40
A-405
Dim
A
B
C
D
Max
5.21
Min
25.40
Max
5.20
4.06
4.10
0.71
0.864
0.53
0.64
2.00
2.72
2.00
2.70
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: DO-41 0.30 grams (approx)
A-405 0.20 grams (approx)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
1N
4001/L
1N
4002/L
1N
4003/L
1N
4004/L
1N
4005/L
1N
4006/L
1N
4007/L
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
V
RRM
V
RWM
V
R
V
R(RMS)
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
@ T
A
= 75
°
C
I
O
1.0
A
I
FSM
30
A
@ I
F
= 1.0A
@ T
A
= 25
°
C
@ T
A
= 100
°
C
V
FM
1.0
5.0
50
V
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Maximum DC Blocking Voltage Temperature
Operating and Storage Temperature Range (Note 3)
I
RM
μ
A
C
j
15
8
pF
K/W
°
C
°
C
R
θ
JA
T
A
T
j,
T
STG
100
+150
-65 to +175
Notes:
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1. MHz and applied reverse voltage of 4.0V DC.
3. JEDEC Value
POWER SEMICONDUCTOR
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