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參數資料
| 型號： | 1N415EMR |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SILICON POINT CONTACT MIXER DIODES |
| 中文描述： | 硅二極管點接觸混合機 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 27K |
| 代理商： | 1N415EMR |
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
1N4150 / FDLL4150
Symbol
Parameter
Value
Units
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
50
200
400
600
V
mA
mA
mA
1.0
4.0
A
A
°
C
°
C
T
stg
T
J
-65 to +200
175
Symbol
Characteristic
Max
Units
1N / FDLL 4150
500
3.33
300
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
R
θ
JA
COLOR BAND MARKING
DEVICE
1ST BAND
FDLL4150
BLACK
2ND BAND
ORANGE
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35
1
Discrete POWE R & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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