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參數資料
型號: 1N4257SM
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: 參考電壓二極管
英文描述: 0.25 A, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, MELF-2
文件頁數: 1/3頁
文件大小: 292K
代理商: 1N4257SM
Y-SEALED
VOIDLESS-HERMETICALL
HIGH VOLTAGE RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2004
12-29-2004 REV A
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SCOTTSD A L E DIVISION
1N3643 thru 1N3647
1N4254 thru 1n4257
1N5181 thru 1N5184
1N3643
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1
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3647
1N4254
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1
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4257
1N5181
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1
N
5184
DESCRIPTION
APPEARANCE
These “standard recovery” high voltage rectifier diode series are military qualified to
MIL-PRF-19500/279 for the 1N3644 thru 1N3647. Others such as the 1N5181 thru
1N5184 meet or exceed requirements of MIL-PRF-19500/389. They are ideal for
high-reliability where a failure cannot be tolerated for high voltage applications.
These 0.10 and 0.25 Amp rated rectifiers at 55C for working peak reverse voltages
from 1000 to 10,000 volts are hermetically sealed with voidless-glass construction
using an internal “Category I” metallurgical bond.
Surface mount MELF package
configurations are also available by adding “SM” suffix. Microsemi also offers
numerous other rectifier products to meet higher and lower current ratings with
various recovery time speed requirements including fast and ultrafast device types
in both through-hole and surface mount packages.
S Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
JEDEC registered 1N3643 thru 1N3647, 1N4254
thru 1N4257, and 1N5181 thru 1N5187 series
Voidless Hermetically Sealed Glass Package
Triple Layer Passivation
Internal “Category I” Metallurgical bonds
Lowest Reverse Leakage Available
Lowest Thermal Resistance Available
Absolute High Voltage / High Temperature Stability
1N5181 thru 1N5184 meet or exceed requirements
of MIL-S-19500/389
1N3644 thru 1N3647 JAN, JANTX types available
per MIL-S19500/279
Surface mount equivalents also available in a square
end-cap MELF configuration with “SM” suffix
High voltage standard recovery rectifiers 1000 to
10,000 V
Military and other high-reliability applications
Applications include bridges, half-bridges, catch
diodes, voltage multipliers,
X-ray machines,
power supplies, transmitters, and radar
equipment
High forward surge current capability
Extremely robust construction
Low thermal resistance
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction & Storage Temperature: -65
oC to +175oC
Thermal Resistance: 38
oC/W junction to lead at 3/8
inch (10 mm) lead length from body
Average Rectified Forward Current (IO):
1N3643 thru 1N3647: 0.250 Amps @ TA = 55C
0.150 Amps @ TA = 100C
1N4254 thru 1N4257: 0.250 Amps @ TA = 55C
0.150 Amps @ TA = 100C
1N5181 thru 1N5184: 0.100 Amps @ TA = 55C
0.060 Amps @ TA = 100C
Forward Surge Current: See Electrical
Characteristics for surge at 8.3 ms half-sine wave
Solder Temperatures: 260C for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 400 mg (approx)
See package dimensions on last page
相關PDF資料
PDF描述
1N5915BUR-1D 3.9 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
1N5916BUR-1D 4.3 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
1N5918BUR-1DTR 5.1 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
1N5933BUR-1CTR 22 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
1N5946BUR-1CTR 75 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
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1N4291 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:DO-41
1N4292 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:DO-41
1N4293 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:DO-41
1N4294 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON POINT CONTACT MIXER DIODES
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