欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 1N4584D2A-JQRS.GCDE
廠商: SEMELAB LTD
元件分類: 參考電壓二極管
英文描述: 6.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封裝: HERMETIC SEALED, CERAMIC, DLCC2 VARIANT A, 2 PIN
文件頁數: 1/4頁
文件大小: 198K
代理商: 1N4584D2A-JQRS.GCDE
6.4V TEMPERATURE COMPENSATED
ZENER DIODE
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing an order.
Semelab
Semelab Limited
Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 8251
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Issue 3
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 1 of 4
1N4565 - 1N4584AD2A
1N4565 - 1N4584AD2B
Hermetic Ceramic Surface Mount Package
6.4V
±5% Reference Voltage
Stable over a wide temperature range
Space Level and High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
VZM
Reference Voltage
6.4V
IZM(1)
Continuous DC Current
70mA
PT
Total Power Dissipation at
TA = 25°C
500mW
De-rate TA > 25°C
3.33mW/
°C
TJ
Junction Temperature Range
-55 to +175
°C
TSTG
Storage Temperature Range
-55 to +175
°C
TSP
Maximum Soldering Pad Temperature for 20s
260
°C
THERMAL PROPERTIES
Symbol
Parameter
Min
Typ
Max
Units
RθJA
Thermal Resistance Junction to Ambient
260
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
VZ
Zener Voltage
At IZT
6.08
6.4
6.72
V
VZ
Zener Voltage Coefficient from VZ
See Electrical Stability Table
IR
Reverse Leakage Current
VR = 3V
2.0
A
ZZ
Dynamic Impedance
See Electrical Stability Table
相關PDF資料
PDF描述
1N6291/4F-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1N6292A/58-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1N6293A/53-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1N6295/74-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1N6297A/58-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
相關代理商/技術參數
參數描述
1N4585GP-E3/54 功能描述:DIODE GEN PURP 800V 1A DO204AC 制造商:vishay semiconductor diodes division 系列:SUPERECTIFIER? 包裝:帶卷(TR) 零件狀態:有效 二極管類型:標準 電壓 - DC 反向(Vr)(最大值):800V 電流 - 平均整流(Io):1A 不同 If 時的電壓 - 正向(Vf):1V @ 1A 速度:標準恢復 >500ns,> 200mA(Io) 反向恢復時間(trr):2μs 不同?Vr 時的電流 - 反向漏電流:5μA @ 800V 不同?Vr,F 時的電容:15pF @ 4V,1MHz 安裝類型:通孔 封裝/外殼:DO-204AC,DO-15,軸向 供應商器件封裝:DO-204AC(DO-15) 工作溫度 - 結:-65°C ~ 175°C 標準包裝:4,000
1N4586 制造商:-- 功能描述:Rectifier Diode, 1K Volt, DO-29
1N4586GP/4 制造商:Vishay Semiconductors 功能描述:Diode Switching 1KV 1A 2-Pin DO-15 T/R
1N4586GP/54 功能描述:整流器 1.0 Amp 1000 Volt Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N4586GP-E3/23 功能描述:整流器 1.0 Amp 1000 Volt Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
主站蜘蛛池模板: 苗栗市| 天柱县| 衡水市| 油尖旺区| 浦城县| 龙游县| 金溪县| 双鸭山市| 东港市| 安多县| 黄骅市| 茶陵县| 大洼县| 武隆县| 客服| 富平县| 虹口区| 河池市| 额济纳旗| 郴州市| 曲靖市| 房山区| 科技| 泊头市| 乌什县| 区。| 盐山县| 永善县| 关岭| 静宁县| 广元市| 绥阳县| 凤凰县| 永春县| 丰县| 嘉禾县| 唐海县| 南华县| 辉县市| 苏尼特左旗| 永仁县|