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參數資料
| 型號： | 1N4755AP |
| 英文描述： | Zener Voltage Regulator Diode |
| 中文描述： | 齊納穩壓二極管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 104K |
| 代理商： | 1N4755AP |
Medium Power Zener and Transient Voltage
Protection Axial Lead Series Reliability &
Qualification Data
This is the reliability and qualification data for the Medium Power Transient Voltage
Suppression Series.
Features
Mechanical
Molded axial lead
Weight: 1.5 grams maximum
400-1.5K Watts Peak Pulse Power Dissipation
Polarity: Marked with Band
Stand Off Voltages from 5.5V – 400V
Unipolar or Bipolar
Maximum Ratings
400-1.5K Watts of Peak Pulse Power Dissipation
Operating Temperatures: -65
° C to 175° C
Storage Temperature: -65
° C to 175° C
Forward Surge Rating: 200Amps (1/20 second)
Steady State Power Dissipation 5.0 W @ TL= 75
°C
Stress
Results
Moisture Classification
Level 1 Package - No Drypack Required
ESD Sensitivity
Non-sensitive – No special handling required
Steady State Life
0/50 @ 25
° C (1000 Hours)
Temperature Cycle
0/350 @ 1000 temp cycles (65
° C to 200° C)
High Temperature Reverse Bias
0/350 @ 125
° C (1000 Hours)
Humidity
0/200 @ 85
° C 85% Humidity (1000 hours)
1.5KE1302
John Freeman
Series: P4KE, P5KE, P6KE, 1EZ, 2EZ, 3EZ Series
Director of Engineering
1N6267-1N6303A, 1N5913-1N5956
1.5KE6.8-1.5KE400A
Bill Jones
SAC5.0-SAC50, SA5-SA170 and C
Director of Quality Control and
GMP-5, 1N5333-1N5388,1N4728-1N4764
Reliability Assurance
S C O TTS D A LE D I V I S I O N
相關PDF資料 |
PDF描述 |
|---|---|
| 1N4755D | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 1N4755P | Zener Voltage Regulator Diode |
| 1N4756AP | Zener Voltage Regulator Diode |
| 1N4756D | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 1N4756P | Zener Voltage Regulator Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N4755AP/TR12 | 制造商:Microsemi Corporation 功能描述:1.0W, VZ = 43V, ? 5% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 1.0W 43V 5% DO41 |
| 1N4755AP/TR8 | 功能描述:DIODE ZENER 43V 1W DO-41 RoHS:是 類別:分離式半導體產品 >> 單二極管/齊納 系列:- 標準包裝:1 系列:- 電壓 - 齊納（標稱）(Vz):36V 電壓 - 在 If 時為正向 (Vf)（最大）:900mV @ 10mA 電流 - 在 Vr 時反向漏電:100nA @ 27V 容差:±5% 功率 - 最大:200mW 阻抗（最大）(Zzt):70 歐姆 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應商設備封裝:SOT-323 包裝:剪切帶 (CT) 工作溫度:-65°C ~ 150°C 產品目錄頁面:1585 (CN2011-ZH PDF) 其它名稱:MMBZ5258BWMMBZ5258BWCTMMBZ5258BWCT-NDMMBZ5258BWDICT |
| 1N4755APE3/TR12 | 制造商:Microsemi Corporation 功能描述:1.0W, VZ = 43V, ? 5% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 1.0W 43V 5% DO41 |
| 1N4755APE3/TR8 | 制造商:Microsemi Corporation 功能描述:1.0W, VZ = 43V, ? 5% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 1.0W 43V 5% DO41 |
| 1N4755ARL | 制造商:Motorola Inc 功能描述: |
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