- 您現在的位置：買賣IC網 > PDF目錄90940 > 1N4933GL (LITE-ON SEMICONDUCTOR CORP) 1 A, 50 V, SILICON, SIGNAL DIODE PDF資料下載
參數資料
| 型號： | 1N4933GL |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 50 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, A-405, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 33K |
| 代理商： | 1N4933GL |
VRMS
VDC
VRRM
I(AV)
IFSM
@TA
=75 C
1N4933GL thru 1N4937GL
FEATURES
Fast switching for high efficiency
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : JEDEC A-405 molded plastic
Polarity : Color band denotes cathode
Weight : 0.008 ounces, 0.22 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
1N4935GL
200
140
200
1N4933GL
50
35
50
1N4934GL
100
70
100
1N4937GL
600
420
600
1N4936GL
400
280
400
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
1.0
30
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 4)
R0JA
50
C/W
CJ
Typical Junction
Capacitance (Note 3)
15
pF
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =100 C
@TJ =25 C
5.0
50
uA
VF
Maximum forward Voltage at 1.0A DC
1.3
V
A
V
UNIT
V
All Dimensions in millimeter
Max.
Min.
A-405
Dim.
A
D
C
B
25.4
5.20
-
4.10
0.53
2.00
2.70
0.64
A-405
A
C
D
A
B
Typical Reverse Recovery Time (Note 1)
TRR
200
ns
SYMBOL
CHARACTERISTICS
REVERSE VOLTAGE - 50 to 600 Volts
FORWARD CURRENT - 1.0 Ampere
FAST RECOVERY
GLASS PASSIVATED RECTIFIERS
Typical Reverse Recovery Time (Note 2)
TRR
130
ns
NOTES : 1.Measured with IF=1.0A,VR=30V,di/dt=50A/us.
2.Measured with IF=0.5A,IR=1A,IRR=0.25A.
3.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4.Thermal Resistance Junction to Ambient.
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KDEB01
相關PDF資料 |
PDF描述 |
|---|---|
| 1N4936GL | 1 A, 400 V, SILICON, SIGNAL DIODE |
| 1N4937GL | 1 A, 600 V, SILICON, SIGNAL DIODE |
| 1N4933GL | 1 A, 50 V, SILICON, SIGNAL DIODE |
| 1N4933G | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N4934GL | 1 A, 100 V, SILICON, SIGNAL DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N4933GL-T | 功能描述:整流器 1.0A 50V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4933GP | 功能描述:整流器 1.0a Rectifier Fast Recovery RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4933GP/23 | 功能描述:二極管 - 通用，功率，開關 50 Volt 1.0A 200ns Glass Passivated RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| 1N4933GP/4 | 功能描述:二極管 - 通用，功率，開關 1.0 Amp 50 Volt Glass Passivated RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| 1N4933GP/54 | 功能描述:二極管 - 通用，功率，開關 1.0 Amp 50 Volt GLASS PASSIVATED RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。