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參數資料
| 型號： | 1N5194 |
| 英文描述： | GENERAL PURPOSE SILICON DIODES |
| 中文描述： | 一般用途硅二極管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 31K |
| 代理商： | 1N5194 |
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC):
250 C/W maximum
THERMAL IMPEDANCE: (
Z
O
JX): 70
C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION:
ANY.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
WEBSITE: http://www.cdi-diodes.com
FAX (781) 665-7379
E-mail: mail@cdi-diodes.com
AVAILABLE IN
JAN, JANTX,
AND
JANTXV
PER MIL-PRF-19500/118
GENERAL PURPOSE SILICON DIODES
METALLURGICALLY BONDED
1N5194
1N5195
1N5196
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2 mA/°C From 25°C to 150°C
1.0 mA/°C From 150°C to 175°C
Forward Current: 650 mA
TYPE
VRM
V RWM
I O
I O
I FSM
TA= 150°C
TP= 1/120 s
TA= 25°C
A
V (pk)
V (pk)
mA
mA
1N5194
1N5195
1N5196
80
180
250
70
180
225
200
200
200
50
50
50
2
2
2
TYPE
VF
I R1 at V RWM
TA= 25°C
I R2 at V RM
TA= 25°C
I R3 at V RWM
TA= 150°C
@100mA
V dc
nA dc
μA
μA dc
1N5194
1N5195
1N5196
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
25
25
25
100
100
100
5
5
5
相關PDF資料 |
PDF描述 |
|---|---|
| 1N5195 | General Purpose Silicon Diodes(通用型硅二極管) |
| 1N5196 | General Purpose Silicon Diodes(通用型硅二極管) |
| 1N5194UR | GENERAL PURPOSE SILICON DIODES |
| 1N5194 | GENERAL PURPOSE SILICON DIODES |
| 1N5194UR | LL-35 High Voltage / Current Low Leakage Glass Diodes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5194JANTX | 制造商:Microsemi Corporation 功能描述: |
| 1N5194UR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LL-35 High Voltage / Current Low Leakage Glass Diodes |
| 1N5194UR_08 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING DIODE |
| 1N5195 | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 180V 0.2A 2PIN DO-35 - Bulk |
| 1N5195JANTX | 制造商:Microsemi Corporation 功能描述: |
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