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參數資料
| 型號： | 1N5257C |
| 元件分類： | 齊納二極管 |
| 英文描述： | 33 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封裝： | ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數： | 5/5頁 |
| 文件大小： | 91K |
| 代理商： | 1N5257C |
ELECTRICAL CHARACTERISTICS
(Ratings at TA=25
oC ambient temperature unless otherwise specified).
Device
Vz @ Izt
Current
ZZT @ IZT
ZZK @IZK=0.25mA
IR @ VR
Voltage
IZT
Ω
uA
VR
Nominal
(mA)
Max.
(Volts)
1N5221B
2.4
20
30
1200
100
1.0
1N5222B
2.5
20
30
1250
100
1.0
1N5223B
2.7
20
30
1300
75
1.0
1N5224B
2.8
20
30
1400
75
1.0
1N5225B
3.0
20
29
1600
50.0
1.0
1N5226B
3.3
20
28
1600
25.0
1.0
1N5227B
3.6
20
24
1700
15.0
1.0
1N5228B
3.9
20
23
1900
10.0
1.0
1N5229B
4.3
20
22
2000
5.0
1.0
1N5230B
4.7
20
19
1900
5.0
2.0
1N5231B
5.1
20
17
1600
5.0
2.0
1N5232B
5.6
20
11
1600
5.0
3.0
1N5233B
6.0
20
7
1600
5.0
3.5
1N5234B
6.2
20
7
1000
5.0
4.0
1N5235B
6.8
20
5
750
3.0
5.0
1N5236B
7.5
20
6
500
3.0
6.0
1N5237B
8.2
20
8
500
3.0
6.5
1N5238B
8.7
20
8
600
3.0
6.5
1N5239B
9.1
20
10
600
3.0
7.0
1N5240B
10
20
17
600
2.0
8
1N5241B
11
20
22
600
1.0
8.4
1N5242B
12
20
30
600
0.5
9
1N5243B
13
9.5
13
600
0.1
10
1N5244B
14
9.0
15
600
0.1
10
1N5245B
15
8.5
16
600
0.1
11
1N5246B
16
7.8
17
600
0.1
12
1N5247B
17
7.4
19
600
0.1
13
1N5248B
18
7.0
21
600
0.1
14
1N5249B
19
6.6
23
600
0.1
14
1N5250B
20
6.2
25
600
0.1
15
1N5251B
22
5.6
29
600
0.1
17
1N5252B
24
5.2
33
600
0.1
18
1N5253B
25
5.0
35
600
0.1
19
1N5254B
27
4.6
41
600
0.1
21
1N5255B
28
4.5
44
600
0.1
21
1N5256B
30
4.2
49
600
0.1
23
1N5257B
33
3.8
58
700
0.1
25
1N5258B
36
3.4
70
700
0.1
27
1N5259B
39
3.2
80
800
0.1
30
1N5260B
43
3.0
93
900
0.1
33
1N5261B
47
2.7
105
1000
0.1
36
1N5262B
51
2.5
125
1100
0.1
39
1N5263B
56
2.2
150
1300
0.1
43
Notes:
1. The type numbers listed have zener voltage as whown and have a standard
tolerance on the nominal zener voltage of ±5%. Device of ±2% is indicated
by a "C" instead of a "B".
2. Nominal zener voltages between the voltages shown and tighter voltage, for
detalied information on price, availability and delivery.
3. The zener voltage(VZ) is tested under pulse condition. The measured VZ is
guaranteed to be within specification with device junction in thermal equilibrium.
4. Zener impedance is derived from the 60-cycle ac voltage, which results when an ac
current having an RMS value equal to 10% of the dc zener current (IZT) is
superimposed to IZT.
Version: A07
相關PDF資料 |
PDF描述 |
|---|---|
| 1N5258B | 36 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N5259C | 39 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N5262C | 51 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N5223A | 2.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH |
| 1N5233A | 6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5257C-TAP | 功能描述:穩壓二極管 33 Volt 0.5W 2% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 1N5257C-TR | 功能描述:穩壓二極管 33 Volt 0.5W 2% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 1N5257D | 制造商:Microsemi Corporation 功能描述:Diode Zener Single 33V 1% 500mW 2-Pin DO-35 |
| 1N5257TA | 功能描述:DIODE ZENER 33V 500MW DO35 制造商:smc diode solutions 系列:- 包裝:帶卷（TR） 零件狀態:有效 電壓 - 齊納（標稱值）（Vz）:33V 容差:- 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:58 歐姆 不同?Vr 時的電流 - 反向漏電流:100nA @ 25V 不同 If 時的電壓 - 正向（Vf）:1.1V @ 200mA 工作溫度:200°C 安裝類型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應商器件封裝:DO-35 標準包裝:5,000 |
| 1N5258 | 制造商:Motorola Inc 功能描述: |
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