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參數資料
| 型號： | 1N5344 |
| 廠商： | Diodes Inc. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | surface mount silicon Zener diodes |
| 中文描述： | 表面貼裝硅穩壓二極管 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 1N5344 |
D
S
21407 Rev. D-3
1 of 3
1N5344B-1N5388B
Voltage Range 8.2V - 200V
Glass Passivated Junction
5W Steady State
High Surge Capability
5% Voltage Tolerance on Nominal
V
Z
is Standard
100% Tested
1N5344B - 1N5388B
5W ZENER DIODE
Notes:
1. Nominal Zener Voltage (V
Z
) is read with the device in standard test clips with 3/8- to 1/2-inch spacing between clip and case
of the diode. Before reading, the diode is allowed to stabilize for a period of 40 10 milliseconds at 25 C +8, -2 C.
2. The Zener Impedance (Z
Z
or Z
ZK
) is derived from the 60 Hz ac voltage, which results when an ac current having an rms
value equal to 10% of the dc zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK,
respectively.
3. The Surge Current (I
ZSM
) is specified as the maximum peak of a nonrecurrent sine wave of 8.3 milliseconds duration.
4. Voltage regulation ( V
Z
) is the difference between the voltage measured at 10% and 50% of I
ZM
.
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
Value
Unit
DC Power Dissipation @ T
L
= 75 C 9.5mm from
Body (Board Mounted)
Power Derating Above 75 C Lead Temperature
Operating and Storage Temperature Range
P
d
5.0
W
—
20
C/W
C
T
j
, T
STG
-55 to +175
Features
Mechanical Data
Case: Molded Plastic Over Glass Passivated
Junction
Leads: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Approx. Weight: 1.2 grams
5W
Min
Dim
A
B
C
D
Max
25.40
—
8.38
8.89
0.94
1.09
3.30
3.68
All Dimensions in mm
A
A
B
C
D
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| 1N5344B | surface mount silicon Zener diodes |
| 1N5344 | surface mount silicon Zener diodes |
| 1N5344A | TRANSISTOR, NPN, POWER, SOT-223 ZETEX FZT491 |
| 1N5344ATR | surface mount silicon Zener diodes |
| 1N5344BTR | surface mount silicon Zener diodes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5344/TR12 | 功能描述:DIODE ZENER 8.2V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態:有效 電壓 - 齊納（標稱值）（Vz）:8.2V 容差:±20% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:1.5 歐姆 不同?Vr 時的電流 - 反向漏電流:10μA @ 5.9V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類型:通孔 封裝/外殼:T-18，軸向 供應商器件封裝:T-18 標準包裝:3,000 |
| 1N5344/TR8 | 功能描述:DIODE ZENER 8.2V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態:有效 電壓 - 齊納（標稱值）（Vz）:8.2V 容差:±20% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:1.5 歐姆 不同?Vr 時的電流 - 反向漏電流:10μA @ 5.9V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類型:通孔 封裝/外殼:T-18，軸向 供應商器件封裝:T-18 標準包裝:1,000 |
| 1N5344A | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON ZENER DIODES |
| 1N5344A/TR12 | 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 8.2V, ? 10% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 8.2V 10% T-18 |
| 1N5344A/TR8 | 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 8.2V, ? 10% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 8.2V 10% T-18 |
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