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參數資料
型號: 1N5387BE3TR
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: 齊納二極管
英文描述: 190 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封裝: ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
文件頁數: 1/4頁
文件大小: 188K
代理商: 1N5387BE3TR
Silicon 5 Watt Zener Diodes
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2008
8-06-2008 REV D
WWW
.Microse
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i
.CO
M
S C O T TS DALE DIVISION
1N5333B thru 1N5388B, e3
1N5
333
B
thr
u
1N53
88
B
DESCRIPTION
APPEARANCE
The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt
Zeners provides voltage regulation in a selection from 3.3 to 200 volts with
different tolerances as identified by specific suffix letter on the part number.
These plastic encapsulated Zeners have moisture classification of Level 1
with no dry pack required and are also available in various military
equivalent screening levels by adding a prefix identifier as also described in
the Features section. They may be operated at high maximum dc currents
with adequate heat sinking with their comparatively low thermal resistance
design.
Microsemi also offers numerous other Zener products to meet
higher and lower power applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
,e3
FEATURES
APPLICATIONS / BENEFITS
JEDEC registered 1N5333 to 1N5388B
Zener voltage available 3.3V to 200V
Standard voltage tolerances are plus/minus 5% with B
suffix and 10 % with A suffix identification
Tight tolerances available in plus or minus 2% or 1%
with C or D suffix respectively
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are available
by adding MQ, MX, or MV prefixes respectively to
part numbers.
Surface mount equivalents available as SMBJ5333 to
SMBJ5388B, or SMBG5333B to SMBG5388B
RoHS Compliant devices available by adding e3 suffix
Regulates voltage over a broad operating current and
temperature range
Wide selection from 3.3 to 200 V
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
Withstands high surge stresses
Minimal changes of voltage versus current as
specified by voltage regulation (
ΔV
Z)
High specified maximum current (I
ZM) when
adequately heat sunk
Moisture classification is Level 1 per IPC/JEDEC J-
STD-020B with no dry pack required
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Power dissipation at 25C: 5.0 watts (also see
derating in Figure 1).
Operating and Storage temperature: -65C to
+150
C
Thermal Resistance: 25 C/W junction to lead at 3/8
(10 mm) lead length from body, or 85
C/W junction
to ambient when mounted on FR4 PC board (1oz
Cu) with 4 mm
2 copper pads and track width 1
mm, length 25 mm
Steady-State Power: 5 watts at T
L < 25
oC 3/8 inch
(10 mm) from body, or 1.47 watts at TA = 25
C
when mounted on FR4 PC described for thermal
resistance (also see Figure 1)
Forward voltage @1.0 A: 1.2 volts (maximum)
Solder Temperatures: 260 C for 10 s (max)
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
TERMINALS: Leads, Tin-Lead or RoHS Compliant
annealed matte-Tin plating solderable per MIL-STD-
750, method 2026
POLARITY: Cathode indicated by band. Diode to
be operated with the banded end positive with
respect to the opposite end.
MARKING: Part number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.7 grams
See package dimensions on last page
T-18
相關PDF資料
PDF描述
1N5334BE3 3.6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N5334C/TR8 3.6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N5335A/TR8 3.9 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N5335BE3/TR8 3.9 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N5336A/TR8 4.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
相關代理商/技術參數
參數描述
1N5387BRL 功能描述:穩壓二極管 190V 5W RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
1N5387BRLG 功能描述:穩壓二極管 ZEN REG 5W 190V TR RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
1N5387C/TR12 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 190V, ? 2% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 190V 2% T-18
1N5387C/TR8 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 190V, ? 2% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 190V 2% T-18
1N5387CE3/TR12 功能描述:DIODE ZENER 190V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷(TR) 零件狀態:有效 電壓 - 齊納(標稱值)(Vz):190V 容差:±2% 功率 - 最大值:5W 阻抗(最大值)(Zzt):450 歐姆 不同?Vr 時的電流 - 反向漏電流:500nA @ 137V 不同 If 時的電壓 - 正向(Vf):1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類型:通孔 封裝/外殼:T-18,軸向 供應商器件封裝:T-18 標準包裝:3,000
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