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參數資料
| 型號： | 1N5401-TB |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | 3.0A SILICON RECTIFIER |
| 中文描述： | 3.0A的整流硅 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 78K |
| 代理商： | 1N5401-TB |
1N5400GP
THRU
1N5408GP
3 Amp Glass
Passivated Rectifier
50 - 1000 Volts
DO-201AD
Features
Low Current Leakage
Metalurgically Bonded Construction
Low Forward Voltage
High Current Capability
Glass Passivated Junction
Maximum Ratings
Operating Temperature: -55
°
C to +150
°
C
Storage Temperature: -55
°
C to +150
°
C
Maximum Thermal Resistance; 30
°
C/W Junction To Lead
DIMENSIONS
INCHES
MIN
---
---
.048
1.000
MM
DIM
A
B
C
D
MAX
.370
.250
.052
---
MIN
---
---
1.20
25.40
MAX
9.50
6.40
1.30
---
NOTE
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
1N5400GP
1N5401GP
1N5402GP
1N5404GP
1N5406GP
1N5407GP
1N5408GP
---
---
---
---
---
---
---
35V
70V
140V
280V
420V
560V
700V
50V
100V
200V
400V
600V
800V
1000V
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
*Pulse test: Pulse width 300
μ
sec, Duty cycle 1%
I
F(AV)
3.0A
T
A
= 105
°
C
I
FSM
200A
8.3ms, half sine
V
F
1.1V
I
FM
= 3.0A;
T
J
= 25
°
C*
I
R
5.0
μ
A
50
μ
A
T
J
= 25
°
C
T
J
= 125
°
C
C
J
40pF
Measured at
1.0MHz, V
R
=4.0V
A
B
C
D
D
Cathode
Mark
www.
mc c semi
.c om
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
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| 1N5408-T3 | 3.0A SILICON RECTIFIER |
| 1N5408-TB | 3.0A SILICON RECTIFIER |
| 1N5404-T3 | 3.0A SILICON RECTIFIER |
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