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參數資料
| 型號： | 1N5405/72-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 330K |
| 代理商： | 1N5405/72-E3 |
1N5400 thru 1N5408
Document Number 88516
25-Aug-05
Vishay General Semiconductor
www.vishay.com
1
DO-201AD
General Purpose Plastic Rectifier
Major Ratings and Characteristics
IF(AV)
3.0 A
VRRM
50 V to 1000 V
IFSM
200 A
IR
5.0 A
VF
1.2 V
Tj max.
150 °C
Features
Low forward voltage drop
Low leakage current
High forward surge capability
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application.
(Note: Theses devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Mechanical Data
Case: DO-201AD, molded epoxy body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads,
solderable per J-STD-002B and JESD22-B102D
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
1N5400
1N5401
1N5402
1N5403
1N5404
1N5405
1N5406
1N5407
1N5408
Unit
Maximum repetitive peak
reverse voltage
VRRM
50
100
200
300
400
500
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
210
280
350
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
300
400
500
600
800
1000
V
Maximum average forward
rectified current 0.5" (12.5 mm)
lead length at TL = 105 °C
IF(AV)
3.0
A
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Maximum full load reverse
current, full cycle average 0.5"
(12.5 mm) lead length at
TL = 105 °C
IR(AV)
500
A
Operating junction and storage
temperature range
TJ,TSTG
- 50 to + 150
°C
相關PDF資料 |
PDF描述 |
|---|---|
| 1N5408/100-E3 | 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5401 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5408 | 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5402-E3/54 | 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5408-E3/54 | 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5405-E3 | 制造商:Vishay Intertechnologies 功能描述:STANDARD DIODE, 3A, 500V, DO-201AD, Diode Type:Standard Recovery, Diode Configur |
| 1N5405-E3/51 | 功能描述:整流器 3.0 Amp 500 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5405-E3/54 | 功能描述:整流器 3.0 Amp 500 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5405G | 制造商:DACHANG 制造商全稱:Rugao Dachang Electronics Co., Ltd 功能描述:General Purpose Plastic Rectifier Reverse Voltage 50 to 1000 V Forward Current 3.0 A |
| 1N5405-G | 功能描述:二極管 - 通用，功率，開關 VRRM=500V, IAV=3A RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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