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參數資料
| 型號： | 1N5407RL |
| 廠商： | MOTOROLA INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE |
| 中文描述： | 3 A, 800 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, CASE 267-03, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 61K |
| 代理商： | 1N5407RL |
1N5400 thru 1N5408
Features
- Diffused Junction
- High Current Capability and Low Forward
Voltage Drop
- Surge Overload Rating to 200A Peak
- Low Reverse Leakage Current
- Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
- Case: DO-201AD, Molded Plastic
- Terminals: Solderable per MIL-STD-202,
Method 208
- Polarity: Cathode Band
- Weight: 1.1 grams (approx.)
3.0A Rectifier
www.comchiptech.com
COMCHIP
MDS0312006A
Page 1
Reverse Voltage: 50 to 1000V
Forward Current: 3.0A
DO-201AD
Dimensions in inches and (millimeters)
0.189 (4.8)
0.209 (5.3)
Dia.
0.047 (1.2)
0.051 (1.3)
Dia.
1.0 (25.4)
Min.
0.284 (7.2)
0.374 (9.5)
1.0 (25.4)
Min.
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
1N
5400
1N
5401
1N
5402
1N
5404
1N
5406
1N
5407
1N
5408
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
@ TA = 105
°C
(Note 1)
IO
3.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
200
A
Forward Voltage
@ IF = 3.0A
VFM
1.0
V
Peak Reverse Current
@ TA = 25
°C
at Rated DC Blocking Voltage
@ TA = 150
°C
IRM
10
100
mA
Typical Junction Capacitance
(Note 2)
Cj
50
25
pF
Typical Thermal Resistance Junction to Ambient
RqJA
15
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5407RLG | 功能描述:整流器 800V 3A Standard RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5407-T | 功能描述:整流器 3.0A 800V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5407-T/R | 制造商:Taitron Components Inc 功能描述: |
| 1N5407-T3 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:3.0A SILICON RECTIFIER |
| 1N5407TA | 功能描述:DIODE GEN PURP 800V 3A DO201AD 制造商:smc diode solutions 系列:- 包裝:帶卷（TR） 零件狀態:有效 二極管類型:標準 電壓 - DC 反向（Vr）（最大值）:800V 電流 - 平均整流（Io）:3A 不同 If 時的電壓 - 正向（Vf）:1.2V @ 3A 速度:標準恢復 >500ns，> 200mA（Io） 反向恢復時間（trr）:- 不同?Vr 時的電流 - 反向漏電流:5μA @ 800V 不同?Vr，F 時的電容:30pF @ 0V，1MHz 安裝類型:通孔 封裝/外殼:DO-201AD，軸向 供應商器件封裝:DO-201AD 工作溫度 - 結:-65°C ~ 175°C 標準包裝:1,250 |
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