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參數資料
| 型號： | 1N5473 |
| 英文描述： | GENERAL PURPOSE ABRUPT VARACTOR DIODES |
| 中文描述： | 一般用途突變的變容二極管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 37K |
| 代理商： | 1N5473 |
P.O. BOX 609
ROCKPORT, MAINE 04856
207-236-6076
FAX 207-236-9558
GENERAL PURPOSE ABRUPT VARACTOR DIODES
1N5441 TO 1N5476
PART CAPACITANCE TUNING RATIO MIN QUALITY FACTOR
NUMBER
@ 4 Vdc 1 MHz C2 V / C30V Q @ - 4 Vdc
(pF) MIN MAX f = 50 MHz
1N5441
6.8
1N5442
8.2
1N5443
10.0
1N5444
12.0
1N5445
15.0
1N5446
18.0
1N5447
20.0
1N5448
22.0
1N5449
27.0
1N5450
33.0
1N5451
39.0
1N5452
47.0
1N5453
56.0
1N5454
68.0
1N5455
82.0
1N5456
100.0
1N5461
6.8
1N5462
8.2
1N5463
10.0
1N5464
12.0
1N5465
15.0
1N5466
18.0
1N5467
20.0
1N5468
22.0
1N5469
27.0
1N5470
33.0
1N5471
39.0
1N5472
47.0
1N5473
56.0
1N5474
68.0
1N5475
82.0
1N5476
100.0
Package style
DC Power Dissipation
@ Ta = 25°C
Min Reverse Breakdown Voltage
@ I
R
= 10 μA
Max Reverse Current (I
R
)
@ 25 Vdc
Max Reverse Current (I
R2
)
@ 25 Vdc 150°C
Temp. Coefficient of Capacitance
@ Vr=4 Vdc; Ta -65° to + 85°c
Operating Temperature (Topr)
Storage Temperature (Tstg)
Capacitance Tolerance
Standard Device
Suffix A
Suffix B
Suffix C
DENOTES MILITARY APPROVAL FOR JAN - JANTX – JANTXV (B & C Tolerance only)
2.5
2.5
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.7
2.7
2.7
2.7
2.8
2.8
2.8
2.8
2.9
2.9
2.9
2.9
2.9
2.9
2.9
2.9
2.9
2.9
2.9
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.2
3.2
3.2
3.2
3.2
3.3
3.3
3.3
3.3
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.2
3.2
3.2
3.2
3.2
3.3
3.3
3.3
3.3
450
450
400
400
400
350
350
350
350
350
300
250
200
175
175
175
600
600
550
550
550
500
500
500
500
500
450
400
300
250
225
200
DO-7
400 mW
30 V
0.02 μA
20 μA
.04% /°C
-65 to +175°C
-65 to +200°C
±20%
±10%
±5%
±2%
相關PDF資料 |
PDF描述 |
|---|---|
| 1N5474 | GENERAL PURPOSE ABRUPT VARACTOR DIODES |
| 1N5475 | GENERAL PURPOSE ABRUPT VARACTOR DIODES |
| 1N5476 | GENERAL PURPOSE ABRUPT VARACTOR DIODES |
| 1N5517 | SCHOTTKY RECTIERS SILICON RECTIFIER DIODES |
| 1N4140 | SCHOTTKY RECTIERS SILICON RECTIFIER DIODES |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5517 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SCHOTTKY RECTIERS SILICON RECTIFIER DIODES |
| 1N5518 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SCHOTTKY RECTIERS SILICON RECTIFIER DIODES |
| 1N5518_03 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5518-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LOW VOLTAGE AVALANCHE DIODES DO-35 |
| 1N5518A | 制造商: 功能描述:Zener Diode, Two Terminal, 3.3 Volt, 10%, DO-35 |
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