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參數(shù)資料
| 型號(hào)： | 1N5519 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | LOW VOLTAGE AVALANCHE DIODES DO-7 |
| 中文描述： | 3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封裝： | HERMETICALLY SEALED, GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 1N5519 |
P.O. BOX 609
ROCKPORT, MAINE 04856 207-236-6076 FAX 207-236-9558
LOW VOLTAGE AVALANCHE ZENER DIODES
HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE
1N5518 - 1N5546
NOMINAL
TEST
MAX ZENER
MAX REVERSE LEAKAGE
MAX NOISE
MAX REGULATION
MAX
.
PART
ZENER
CURRENT IMPEDANCE
CURRENT
DENSITY AT
FACTOR
REGULATOR
NUMBER VOLTAGE
(NOTE 2)
(NOTE 3)
(NOTE 4)
CURRENT
(NOTE 1)
Vz @ Izt
Izt
Zzt @ Izt
Ir
Vr1
Vr2
Iz = 250 A
Vz
IzL
Izm
(VOLTS)
(mA)
(OHMS)
(Adc)
(VOLTS)
(ND V /
√√Hz) (VOLTS)
(mAdc)
1N5518
3.3
20
26
5.0
0.9
1.0
0.5
0.90
2.0
115
1N5519
3.6
20
24
3.0
0.9
1.0
0.5
0.90
2.0
105
1N5520
3.9
20
22
1.0
0.9
1.0
0.5
0.85
2.0
98
1N5521
4.3
20
18
3.0
1.0
1.5
0.5
0.75
2.0
88
1N5522
4.7
10
22
2.0
1.5
2.0
0.5
0.60
1.0
81
1N5523
5.1
5
26
2.0
2.5
0.5
0.65
0.25
75
1N5524
5.6
3
30
2.0
3.0
3.5
1.0
0.30
0.25
68
1N5525
6.2
1
30
1.0
4.5
5.0
1.0
0.20
0.01
61
1N5526
6.8
1
30
1.0
5.5
6.2
1.0
0.10
0.01
56
1N5527
7.5
1
35
0.5
6.0
6.8
2.0
0.05
0.01
51
1N5528
8.2
1
40
0.5
6.5
7.5
4.0
0.05
0.01
46
1N5529
9.1
1
45
0.1
7.0
8.2
4.0
0.05
0.01
42
1N5530
10.0
1
60
0.05
8.0
9.1
4.0
0.10
0.01
38
1N5531
11.0
1
80
0.05
9.0
9.9
5.0
0.20
0.01
35
1N5532
12.0
1
90
0.05
9.5
10.8
10.0
0.20
0.01
32
1N5533
13.0
1
90
0.01
10.5
11.7
15.0
0.20
0.01
29
1N5534
14.0
1
100
0.01
11.5
12.6
20.0
0.20
0.01
27
1N5535
15.0
1
100
0.01
12.5
13.5
20.0
0.20
0.01
25
1N5536
16.0
1
100
0.01
13.0
14.4
20.0
0.20
0.01
24
1N5537
17.0
1
100
0.01
14.0
15.3
20.0
0.20
0.01
22
1N5538
18.0
1
100
0.01
15.0
16.2
20.0
0.20
0.01
21
1N5539
19.0
1
100
0.01
16.0
17.1
20.0
0.20
0.01
20
1N5540
20.0
1
100
0.01
17.0
18.0
20.0
0.20
0.01
19
1N5541
22.0
1
100
0.01
18.0
19.8
25.0
0.25
0.01
17
1N5542
24.0
1
100
0.01
20.0
21.6
30.0
0.30
0.01
16
1N5543
25.0
1
100
0.01
21.0
22.4
35.0
0.35
0.01
15
1N5544
28.0
1
100
0.01
23.0
25.2
40.0
0.40
0.01
14
1N5545
30.0
1
100
0.01
24.0
27.0
45.0
0.45
0.01
13
1N5546
33.0
1
100
0.01
28.0
29.7
50.0
0.50
0.01
12
1. Package Style
DO-7
2. Suffix denotes Vz tolerance: non suffix
±±20%, A suffix ±±10%: Ir @ Vr1, Vz, + Vf only.
Suffix B
±±5%: Ir @ Vr2, Vz, Vz, Vf, ND.
3. Measured with 10%, 60 Hz AC superimposed on Izt.
4. Measured from 1000 to 3000 Hz.
5. Difference between Vz at Izt and IzL.
6. Forward Voltage (Vf): If = 200mA, Ta = 25
°°C, Max = 1.1 Vdc.
MILITARY SCREENING AVAILABLE
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PDF描述 |
|---|---|
| 1N5520 | LOW VOLTAGE AVALANCHE DIODES DO-7 |
| 1N5610 | POWER ZENERS TRANSIENT SUPPRESSOR DIODES |
| 1N914-1 | PERFORMANCE SPECIFICATION |
| 1N957B | METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION |
| 1N957C | METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5519-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
| 1N5519A | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
| 1N5519A-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
| 1N5519ATR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5519AUR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
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