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參數(shù)資料
| 型號(hào)： | 1N5529BUR-1 |
| 英文描述： | Zener Diodes(齊納二極管) |
| 中文描述： | 齊納二極管（齊納二極管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 94K |
| 代理商： | 1N5529BUR-1 |
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
WEBSITE: http://www.cdi-diodes.com
FAX (781) 665-7379
E-mail: mail@cdi-diodes.com
FIGURE 1
DESIGN DATA
CASE:
DO-213AA
,
Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC):
100 C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (
ZOJX): 35
C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +125°C
DC Power Dissipation: 500 mW @ TEC= +125°C
Power Derating: 10 mW / °C above TEC= +125°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS
@ 25°C
,
unless otherwise specified.
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CDI
TYPE
NUMBER
NOMINAL
ZENER
VOLTAGE CURRENT B-C-D SUFFIX
ZENER MAX. ZENER MAXIMUM REVERSE
TEST
IMPEDANCE
REGULATION
FACTOR
CURRENT
LOW
LEAKAGE CURRENT
CUVZ
VZ@ 1ZT
(NOTE 2)
1ZT
ZZT@ 1ZT
(NOTE 3)
lR
VR= VOLTS
1ZM
VZ
1ZL
(NOTE 1)
(NOTE 4)
(NOTE 5)
NON & A-
SUFFIX
B-C-D-
SUFFIX
VOLTS
mA
OHMS
μ
Adc
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
mA
VOLTS
mA
CDLL5518B
CDLL5519B
CDLL5520B
CDLL5521B
CDLL5522B
CDLL5523B
CDLL5524B
CDLL5525B
CDLL5526B
CDLL5527B
CDLL5528B
CDLL5529B
CDLL5530B
CDLL5531B
CDLL5532B
CDLL5533B
CDLL5534B
CDLL5535B
CDLL5536B
CDLL5537B
CDLL5538B
CDLL5539B
CDLL5540B
CDLL5541B
CDLL5542B
CDLL5543B
CDLL5544B
CDLL5545B
CDLL5546B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
26
24
22
18
22
26
30
30
30
35
40
45
60
80
90
90
100
100
100
100
100
100
100
100
100
100
100
100
100
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
10.5
11.5
12.5
13.0
14.0
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
NOTE 1
No Suffix type numbers are +20% with guaranteed limits for only VZ, lR, and VF.
Units with “A” suffix are +10% with guaranteed limits for VZ, lR, and VF. Units with
guaranteed limits for all six parameters are indicated by a “B” suffix for +5.0% units,
“C” suffix for+2.0% and “D” suffix for +1.0%.
NOTE 2
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
NOTE 3
Zener impedance is derived by superimposing on 1ZTA 60Hz rms a.c. current equal to
10% of1ZT.
Reverse leakage currents are measured at VRas shown on the table.
VZis the maximum difference between VZat lZTand VZat lZLmeasured
with the device junction in thermal equilibrium.
NOTE 4
NOTE 5
1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/437
ZENER DIODE, 500mW
LEADLESS PACKAGE FOR SURFACE MOUNT
LOW REVERSE LEAKAGE CHARACTERISTICS
METALLURGICALLY BONDED
1N5518BUR-1
thru
1N5546BUR-1
and
CDLL5518 thru CDLL5546D
MILLIMETERS INCHES
MIN
MAX
1.60
1.70
0.41
0.55
3.30
3.70
2.54 REF.
0.03 MIN.
DIM
D
F
G
G1
S
MIN
0.063 0.067
0.016 0.022
.130
.100 REF.
.001 MIN.
MAX
.146
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