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參數(shù)資料
| 型號： | 1N5532DUR-1 |
| 廠商： | MICROSEMI CORP-IRELAND |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual 1-Of-4 FET Multiplexer/Demultiplexer 16-VQFN -40 to 85 |
| 中文描述： | 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 封裝： | HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 39K |
| 代理商： | 1N5532DUR-1 |
P.O. BOX 609
ROCKPORT, MAINE 04856
207-236-6076
FAX 207-236-9558
LOW VOLTAGE AVALANCHE ZENER DIODES
HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE
1N5518 - 1N5546
NOMINAL TEST MAX ZENER MAX REVERSE LEAKAGE MAX NOISE MAX REGULATION MAX .
PART ZENER CURRENT IMPEDANCE CURRENT DENSITY AT FACTOR REGULATOR
NUMBER VOLTAGE (NOTE 2) (NOTE 3) (NOTE 4) CURRENT
(NOTE 1) Vz @ Izt Izt Zzt @ Izt Ir Vr1 Vr2 Iz = 250 μA
Vz Iz
L
Izm
(VOLTS) (mA) (OHMS) (μAdc) (VOLTS) (ND μV /
√
Hz) (VOLTS) (mAdc) (mAdc)
1N5518
3.3
20
26
5.0
0.9
1N5519
3.6
20
24
3.0
0.9
1N5520
3.9
20
22
1.0
0.9
1N5521
4.3
20
18
3.0
1.0
1N5522
4.7
10
22
2.0
1.5
1N5523
5.1
5
26
2.0
2.0
1N5524
5.6
3
30
2.0
3.0
1N5525
6.2
1
30
1.0
4.5
1N5526
6.8
1
30
1.0
5.5
1N5527
7.5
1
35
0.5
6.0
1N5528
8.2
1
40
0.5
6.5
1N5529
9.1
1
45
0.1
7.0
1N5530
10.0
1
60
0.05
8.0
1N5531
11.0
1
80
0.05
9.0
1N5532
12.0
1
90
0.05
9.5
1N5533
13.0
1
90
0.01
10.5
1N5534
14.0
1
100
0.01
11.5
1N5535
15.0
1
100
0.01
12.5
1N5536
16.0
1
100
0.01
13.0
1N5537
17.0
1
100
0.01
14.0
1N5538
18.0
1
100
0.01
15.0
1N5539
19.0
1
100
0.01
16.0
1N5540
20.0
1
100
0.01
17.0
1N5541
22.0
1
100
0.01
18.0
1N5542
24.0
1
100
0.01
20.0
1N5543
25.0
1
100
0.01
21.0
1N5544
28.0
1
100
0.01
23.0
1N5545
30.0
1
100
0.01
24.0
1N5546
33.0
1
100
0.01
28.0
1. Package Style
DO-7
2. Suffix denotes Vz tolerance: non suffix
±
20%, A suffix
±
10%: Ir @ Vr1, Vz, + Vf only.
Suffix B
±
5%: Ir @ Vr2, Vz,
Vz, Vf, ND.
3. Measured with 10%, 60 Hz AC superimposed on Izt.
4. Measured from 1000 to 3000 Hz.
5. Difference between Vz at Izt and Iz
L
.
6. Forward Voltage (Vf): If = 200mA, Ta = 25
°
C, Max = 1.1 Vdc.
MILITARY SCREENING AVAILABLE
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
2.0
4.0
4.0
4.0
5.0
10.0
15.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N5532DURTR-1 | Dual 1-Of-4 FET Multiplexer/Demultiplexer with -2 V Undershoot-Protection 16-SOIC -40 to 85 |
| 1N5532UR | Dual 1-Of-4 FET Multiplexer/Demultiplexer with -2 V Undershoot-Protection 16-SSOP/QSOP -40 to 85 |
| 1N5532UR-1 | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5532URTR-1 | Dual 1-Of-4 FET Multiplexer/Demultiplexer with -2 V Undershoot-Protection 16-SSOP -40 to 85 |
| 1N5541-1 | Low Voltage Surface Mount 500 mW Avalanche Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5532DURTR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5532TR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5532UR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5532UR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
| 1N5532URTR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
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