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參數資料
| 型號： | 1N5535B |
| 英文描述： | Zener Diodes(齊納二極管) |
| 中文描述： | 齊納二極管（齊納二極管） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 99K |
| 代理商： | 1N5535B |
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
WEBSITE: http://www.cdi-diodes.com
FAX (781) 665-7379
E-mail: mail@cdi-diodes.com
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C
B-C-D
SUFFIX B-C-D SUFFIX
MAXIMUM
DC ZENER
CURRENT
1ZM
JEDEC
TYPE
NUMBER
NOMINAL
ZENER
VOLTAGE
VZ@ 1ZT
(NOTE 2)
ZENER MAX. ZENER MAXIMUM REVERSE
TEST
IMPEDANCE
CURRENT B-C-D SUFFIX
1ZT
(NOTE 3)
MAX. NOISE
DENSITY
@1Z=250
μ
A
ND
REGULATION
FACTOR
LOW
LEAKAGE CURRENT
CUVZ
1ZL
ZZT@ 1ZT
lR
VR= VOLTS
VZ
(NOTE 1)
(NOTE 4)
(NOTE 5)
NON & A-
SUFFIX
B-C-D-
SUFFIX
VOLTS
mAdc
OHMS
μ
Adc
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
mAdc
μ
V/ HZ
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
2.0
4.0
4.0
4.0
5.0
10
VOLTS
mAdc
1N5518B
1N5519B
1N5520B
1N5521B
1N5522B
1N5523B
1N5524B
1N5525B
1N5526B
1N5527B
1N5528B
1N5529B
1N5530B
1N5531B
1N5532B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
20
20
20
20
10
26
24
22
18
22
26
30
30
30
35
40
45
60
80
90
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1N5533B
1N5534B
1N5535B
1N5536B
1N5537B
1N5538B
1N5539B
1N5540B
1N5541B
1N5542B
1N5543B
1N5544B
1N5545B
1N5546B
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
90
100
100
100
100
100
100
100
100
100
100
100
100
100
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
10.5
11.5
12.5
13.0
14.0
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
29
27
25
24
22
21
20
19
17
16
15
14
13
12
15
20
20
20
20
20
20
20
20
20
20
20
20
20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
NOTE 1
No Suffix type numbers are +20% with guaranteed limits for only VZ, lR, and VF. Units
with “A” suffix are +10% with guaranteed limits for VZ, lR, and VF. Units with guaranteed limits for
all six parameters are indicated by a “B” suffix for +5.0% units, “C” suffix for +2.0% and “D” suffix
for +1.0%.
NOTE 2
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
NOTE 3
NOTE 4
NOTE 5
Zener impedance is derived by superimposing on 1ZTA 60Hz rms a.c. current equal to 10% of 1ZT.
Reverse leakage currents are measured at VRas shown on the table.
VZ is the maximum difference between VZ at lZT and VZat lZLmeasured with
the device junction in thermal equilibrium at the ambient temperature of +25°C +3°C.
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC):
250 C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (
ZOJX): 35
C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
Any.
FIGURE 1
1N5518-1 THRU 1N5546B-1 AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/437
LOW REVERSE LEAKAGE CHARACTERISTICS
LOW NOISE CHARACTERISTICS
DOUBLE PLUG CONSTRUCTION
METALLURGICALLY BONDED
1N5518 thru 1N5546D
and
1N5518B-1 thru 1N5546B-1
相關PDF資料 |
PDF描述 |
|---|---|
| 1N5535B-1 | Zener Diodes(齊納二極管) |
| 1N5536B | Zener Diodes(齊納二極管) |
| 1N5536B-1 | Zener Diodes(齊納二極管) |
| 1N5537B | Zener Diodes(齊納二極管) |
| 1N5537B-1 | Zener Diodes(齊納二極管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5535B-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
| 1N5535BTR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5535BUR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5535BUR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ZENER DIODE, 500mW |
| 1N5535BURTR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
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