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參數資料
| 型號： | 1N5539B |
| 英文描述： | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 中文描述： | 低的反向漏電特性 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 99K |
| 代理商： | 1N5539B |
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C
B-C-D
SUFFIX
B-C-D SUFFIX
JEDEC
NOMINAL
ZENER
MAX. ZENER
MAXIMUM REVERSE
MAXIMUM
MAX. NOISE
REGULATION
LOW
TYPE
ZENER
TEST
IMPEDANCE
LEAKAGE CURRENT
DC ZENER
DENSITY
FACTOR
VZ
NUMBER
VOLTAGE
CURRENT
B-C-D SUFFIX
CURRENT
@1Z=250
A
CURRENT
VZ@ 1ZT
1ZT
ZZT @ 1ZT
lR
VR = VOLTS
1ZM
ND
VZ
1ZL
(NOTE 1)
(NOTE 2)
(NOTE 3)
(NOTE 4)
(NOTE 5)
NON & A-
B-C-D-
VOLTS
mAdc
OHMS
Adc
SUFFIX
mAdc
V/ HZ
VOLTS
mAdc
1N5518B
3.3
20
26
5.0
0.90
1.0
115
0.5
0.90
2.0
1N5519B
3.6
20
24
3.0
0.90
1.0
105
0.5
0.90
2.0
1N5520B
3.9
20
22
1.0
0.90
1.0
98
0.5
0.85
2.0
1N5521B
4.3
20
18
3.0
1.0
1.5
88
0.5
0.75
2.0
1N5522B
4.7
10
22
2.0
1.5
2.0
81
0.5
0.60
1.0
1N5523B
5.1
5.0
26
2.0
2.5
75
0.5
0.65
0.25
1N5524B
5.6
3.0
30
2.0
3.0
3.5
68
1.0
0.30
0.25
1N5525B
6.2
1.0
30
1.0
4.5
5.0
61
1.0
0.20
0.01
1N5526B
6.8
1.0
30
1.0
5.5
6.2
56
1.0
0.10
0.01
1N5527B
7.5
1.0
35
0.5
6.0
6.8
51
2.0
0.05
0.01
1N5528B
8.2
1.0
40
0.5
6.5
7.5
46
4.0
0.05
0.01
1N5529B
9.1
1.0
45
0.1
7.0
8.2
42
4.0
0.05
0.01
1N5530B
10.0
1.0
60
0.05
8.0
9.1
38
4.0
0.10
0.01
1N5531B
11.0
1.0
80
0.05
9.0
9.9
35
5.0
0.20
0.01
1N5532B
12.0
1.0
90
0.05
9.5
10.8
32
10
0.20
0.01
1N5533B
13.0
1.0
90
0.01
10.5
11.7
29
15
0.20
0.01
1N5534B
14.0
1.0
100
0.01
11.5
12.6
27
20
0.20
0.01
1N5535B
15.0
1.0
100
0.01
12.5
13.5
25
20
0.20
0.01
1N5536B
16.0
1.0
100
0.01
13.0
14.4
24
20
0.20
0.01
1N5537B
17.0
1.0
100
0.01
14.0
15.3
22
20
0.20
0.01
1N5538B
18.0
1.0
100
0.01
15.0
16.2
21
20
0.20
0.01
1N5539B
19.0
1.0
100
0.01
16.0
17.1
20
0.20
0.01
1N5540B
20.0
1.0
100
0.01
17.0
18.0
19
20
0.20
0.01
1N5541B
22.0
1.0
100
0.01
18.0
19.8
17
20
0.25
0.01
1N5542B
24.0
1.0
100
0.01
20.0
21.6
16
20
0.30
0.01
1N5543B
25.0
1.0
100
0.01
21.0
22.4
15
20
0.35
0.01
1N5544B
28.0
1.0
100
0.01
23.0
25.2
14
20
0.40
0.01
1N5545B
30.0
1.0
100
0.01
24.0
27.0
13
20
0.45
0.01
1N5546B
33.0
1.0
100
0.01
28.0
29.7
12
20
0.50
0.01
NOTE 1
No Suffix type numbers are +20% with guaranteed limits for only VZ, lR, and VF. Units
with “A” suffix are +10% with guaranteed limits for VZ, lR, and VF. Units with guaranteed limits for
all six parameters are indicated by a “B” suffix for +5.0% units, “C” suffix for +2.0% and “D” suffix
for +1.0%.
NOTE 2
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
NOTE 3
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal to 10% of 1ZT.
NOTE 4
Reverse leakage currents are measured at VR as shown on the table.
NOTE 5
VZ is the maximum difference between VZ at lZT and VZ at lZL measured with
the device junction in thermal equilibrium at the ambient temperature of +25°C +3°C.
DESIGN DATA
CASE: Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
250 C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (ZOJX): 35
C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION: Any.
FIGURE 1
1N5518-1 THRU 1N5546B-1 AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/437
LOW REVERSE LEAKAGE CHARACTERISTICS
LOW NOISE CHARACTERISTICS
DOUBLE PLUG CONSTRUCTION
METALLURGICALLYBONDED
1N5518 thru 1N5546D
and
1N5518B-1 thru 1N5546B-1
√
相關PDF資料 |
PDF描述 |
|---|---|
| 1N5540B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5541B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5543B-1 | OSC 5V OTHER |
| 1N5543B | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5544B | LOW REVERSE LEAKAGE CHARACTERISTICS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5539B-1 | 制造商:CDI-DIODE 制造商全稱:Compensated Deuices Incorporated 功能描述:LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5539BTR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5539BUR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5539BUR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ZENER DIODE, 500mW |
| 1N5539BURTR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
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