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參數資料
| 型號： | 1N5621GP/93 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC |
| 封裝： | PLASTIC, DO-15, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 324K |
| 代理商： | 1N5621GP/93 |
1N5615GP thru 1N5623GP
Document Number 88522
19-Sep-05
Vishay General Semiconductor
www.vishay.com
1
DO-204AC (DO-15)
Pat
ente
d*
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly
by Patent No. 3,930,306
Glass Passivated Junction Fast Switching Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
200 V to 1000 V
IFSM
50 A
trr
150 ns, 250 ns, 300 ns, 500 ns
IR
0.5 A
VF
1.2 V
Tj max.
175 °C
Features
Superectifier structure for High Reliability
condition
Cavity-free glass-passivated junction
Fast switching for high efficiency
Low leakage current
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer, automotive and Telecommunication
Mechanical Data
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbols
1N5615GP
1N5617GP
1N5619GP
1N5621GP
1N5623GP
Units
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
200
400
600
800
1000
A
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
IFSM
50
A
Operating junction and storage
temperature range
TJ,TSTG
- 65 to + 175
°C
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| 1N5621GP/66 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC |
| 1N5621GP/64 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC |
| 1N5621GP/51 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC |
| 1N5622GP/68 | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC |
| 1N5622GP/4H | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5621GP-E3/1 | 功能描述:整流器 800 Volt 1.0A 300ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5621GP-E3/51 | 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5621GP-E3/54 | 功能描述:整流器 1.0 Amp 800 Volt Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5621GP-E3/73 | 功能描述:整流器 1.0A 800 Volt 300ns 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5621GPHE3/54 | 功能描述:整流器 800 Volt 1.0A 300ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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