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參數資料
| 型號： | 1N5622GP/53 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC |
| 封裝： | PLASTIC, DO-15, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 292K |
| 代理商： | 1N5622GP/53 |
1N5614GP thru 1N5622GP
Document Number 88520
14-Oct-05
Vishay General Semiconductor
www.vishay.com
1
DO-204AC (DO-15)
Pat
ente
d*
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly
by Patent No. 3,930,306
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
200 V to 1000 V
IFSM
50 A
IR
0.5 A
VF
1.2 V
Tj max.
175 °C
Features
Superectifier structure for High Reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current, IR less than 0.1 A
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application
Mechanical Data
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP
Unit
* Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
140
280
420
560
700
V
* Maximum DC blocking voltage
VDC
200
400
600
800
1000
V
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at TA = 55 °C
IF(AV)
1.0
A
* Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
50
A
* Operating junction temperature range
TJ
- 65 to + 175
°C
* Storage temperature range
TSTG
- 65 to + 175
C
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| 1N5622GP/100 | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC |
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| 1N5622GP/70 | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC |
| 1N5623GP/68 | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC |
| 1N5623GP/4G | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5622GP-E3/54 | 功能描述:整流器 1.0A 1000 Volt 300ns 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5622GP-E3/73 | 功能描述:整流器 1.0A 1000 Volt 300ns 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5622SX | 制造商: 功能描述: 制造商:Semtech Corporation 功能描述: |
| 1N5622UL | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER |
| 1N5622US | 制造商:Microsemi Corporation 功能描述:Diode Switching 100V 1A 2-Pin A-MELF 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 100V 1A 2PIN D-5A - Bulk |
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