- 您現在的位置：買賣IC網 > PDF目錄106348 > 1N5637AB 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13 PDF資料下載
參數資料
| 型號： | 1N5637AB |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 44K |
| 代理商： | 1N5637AB |
1N5629 - 1N5665A
1N5629 - 1N5665A series
All products are sold to the commercial specifications shown, for any additional reliability testing or extended parameters, please consult the factory.
contact semitron on: telephone: +44 (0)1793 724000 fax: +44 (0)1793 720401
32
0
°C50°C100°C150°C
200
°C
0
50%
100%
Tamb
°C
Percentage peak pulse power plotted against ambient temperature
Permissible
area of
operation
0
°C50°C100°C150°C
200
°C
0
0.50
0.25
0.75
1.0
W
Tamb
°C
Continuous d.c. power dissipation plotted against junction temperature
Permissible
area of
operation
Measured @
Stand-off
Voltage (VR)
Measured @
Zero Bias
1.0
100
200
600
800
1000
400
2000
6000
10,000
20,000
4000
60
80
40
30
10
20
2
100 200
Reverse Voltage, Volts V(BR)
capacitance,
pF
10
Figure 1 - Peak Power Derating Curve
Peak pulse power in percent of 25°c rating
Figure 3 - Typical Junction Capacitance
Figure 2 - Continuous D.C. Power Derating Curve
Continuous d.c. power dissipation
31.8Min
5.33 Max
5.58
7.5
9.0
25.4 Min
0.6
0.8
IN56 SERIES (1500 WATT) METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS
(hermetically sealed package for harsh industrial environments)
FEATURES
Stand-off voltage range 6.8 - 200 Volts
Glass Passivated Junction
Excellent clamping capability
Low zener impedance
100% Surge tested
-55°C to +150°C
Hermetically sealed
Uni-polar
MAXIMUM RATING
Peak Pulse Power (Ppk): 1500 Watts (10 X 1000s)
(see diagram on page 6 for wave form)
1 Watt Steady State
Response time: 1 X 10-12 seconds (theoretical)
Operating & storage temperature: -55°C to +150°C
MECHANICAL CHARACTERISTICS
CASE: Metal hermetically sealed DO-13 package
Terminals: Axial leads, solderable per MIL-STD-202 Method 208
Solderable leads = 230°C for 10 seconds (1.59mm from case)
Polarity: Cathode indicated by colour band
Weight: 1.5 grammes (approx)
All dimensions in mm
Voltage Reference
5% Voltage Tolerance
Packaging Option
B = Bulk (500 pcs)
N
1
5 6 XA
X
ORDERING INFORMATION
相關PDF資料 |
PDF描述 |
|---|---|
| 1N5645AT | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N5649T | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N6041B | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N6068AB | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N5392 | 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-15 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5637AE3 | 功能描述:UNI-DIRECTIONAL TVS 制造商:microsemi corporation 系列:- 包裝:散裝 零件狀態:在售 類型:齊納 單向通道:1 電壓 - 反向關態（典型值）:12.8V 電壓 - 擊穿（最小值）:14.3V 電壓 - 箝位（最大值）@ Ipp:21.2V 電流 - 峰值脈沖（10/1000μs）:71A 功率 - 峰值脈沖:1500W（1.5kW） 電源線路保護:無 應用:通用 不同頻率時的電容:- 工作溫度:-65°C ~ 175°C（TA） 安裝類型:通孔 封裝/外殼:DO-13 供應商器件封裝:DO-13（DO-202AA） 標準包裝:100 |
| 1N5637AE3/TR | 功能描述:UNI-DIRECTIONAL TVS 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態:在售 類型:齊納 單向通道:1 電壓 - 反向關態（典型值）:12.8V 電壓 - 擊穿（最小值）:14.3V 電壓 - 箝位（最大值）@ Ipp:21.2V 電流 - 峰值脈沖（10/1000μs）:71A 功率 - 峰值脈沖:1500W（1.5kW） 電源線路保護:無 應用:通用 不同頻率時的電容:- 工作溫度:-65°C ~ 175°C（TA） 安裝類型:通孔 封裝/外殼:DO-13 供應商器件封裝:DO-13（DO-202AA） 標準包裝:100 |
| 1N5637AJANTXV | 制造商:Microsemi Corporation 功能描述: |
| 1N5637ASX | 制造商: 功能描述: |
| 1N5638 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 12.9V 1.5KW 2PIN DO-13 - Bulk |
發布緊急采購，3分鐘左右您將得到回復。