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參數資料
| 型號： | 1N5655 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | Z8 4K OTP 16 MHZ 44-PQFP |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| 封裝： | HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 502K |
| 代理商： | 1N5655 |
1500 WATT UNIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSOR
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2002
11-06-2003 REV A
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SCOTTSD A L E DIVISION
1N5629 thru 1N5665A
1N
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29
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1N
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1N
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DESCRIPTION
APPEARANCE
This popular Transient Voltage Suppressor (TVS) series for 1N5629 thru
1N5665A are JEDEC registered selections for unidirectional devices. All
have the same high Peak Pulse Power rating of 1500 W with extremely fast
response times. They are also available in military qualified selections as
described in the Features section herein. They are most often used for
protecting against transients from inductive switching environments,
induced RF effects, or induced secondary lightning effects as found in
lower surge levels of IEC61000-4-5. They are also very successful in
protecting airborne avionics and electrical systems. Since their response
time is virtually instantaneous, they can also protect from ESD and EFT per
IEC61000-4-2 and IEC61000-4-4.
DO-13
(DO-202AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Unidirectional TVS series for thru-hole mounting
Suppresses transients up to 1500 watts @ 10/1000 s
(see Figure 1)
Clamps transient in less than 100 pico seconds
Working voltage (VWM) range 5 V to 171 V
Hermetic sealed DO-13 metal package
JAN/TX/TXV military qualifications also available for
the tighter tolerance “A” suffix devices per MIL-PRF-
19500/500 by adding the JAN, JANTX, or JANTXV
prefix, e.g. JANTXV1N5629A, etc.
For bidirectional TVS in the same DO-13 package,
see separate data sheet for the 1N6036 – 1N6072A
series (also military qualified)
Surface mount equivalent packages also available as
SMCJ5.0 - SMCJ170CA or SMCG5.0 – SMCG170CA
in separate data sheet (consult factory for other
surface mount options)
Plastic axial-leaded equivalents available in the
1N6267 – 1N6303A series in separate data sheet
Protection from switching transients and induced RF
ESD & EFT protection per IEC 61000-4-2 and -4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1: 1N5629 to 1N5665A
Class 2: 1N5629 to 1N5663A
Class 3: 1N5629 to 1N5655A
Class 4: 1N5629 to 1N5648A
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 : 1N5629 to 1N5658A
Class 2: 1N5629 to 1N5651A
Class 3: 1N5629 to 1N5643A
Class 4: 1N5629 to 1N5636A
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: 1N5629 to 1N5642A
Class 3: 1N5629 to 1N5635A
Inherently radiation hard per Microsemi MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
1500 Watts for 10/1000 s with repetition rate of 0.01% or
less*
at lead temperature (TL) 25
oC (See Figs. 1, 2, & 4)
Operating & Storage Temperatures: -65o to +175oC
THERMAL RESISTANCE: 50oC/W junction to lead at
0.375 inches (10 mm) from body or 110
oC/W junction to
ambient when mounted on FR4 PC board with 4 mm
2
copper pads (1 oz) and track width 1 mm, length 25 mm
DC Power Dissipation
*: 1 Watt at TL < +125oC 3/8” (10
mm) from body (see derating in Fig 3 and note below)
Forward surge current: 200 Amps for 8.3ms half-sine
wave at TA = +25
oC
Solder Temperatures: 260 o C for 10 s (maximum)
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external metal surfaces are Tin-Lead
plated and solderable per MIL-STD-750 method
2026
POLARITY: Cathode connected to case and polarity
indicated by diode symbol
MARKING: Part number and polarity diode symbol
WEIGHT: 1.4 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).
相關PDF資料 |
PDF描述 |
|---|---|
| 1N5656 | IC MICROCONTROLLER 4K 40-DIP |
| 1N5657 | TRANSIENT ABSORPTION ZENER |
| 1N5658 | TRANSIENT ABSORPTION ZENER |
| 1N5659 | TRANSIENT ABSORPTION ZENER |
| 1N5665 | TRANSIENT ABSORPTION ZENER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5655A | 制造商:Microsemi Corporation 功能描述:DO-13 SD - Bulk |
| 1N5655AJ | 制造商: 功能描述: |
| 1N5655AJAN | 制造商: 功能描述: |
| 1N5655AJANTX | 制造商:Microsemi Corporation 功能描述: |
| 1N5656 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 73.7V 1.5KW 2PIN DO-13 - Bulk |
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