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參數(shù)資料
| 型號： | 1N5665 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | TRANSIENT ABSORPTION ZENER |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| 封裝： | HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 502K |
| 代理商： | 1N5665 |
1500 WATT UNIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSOR
100
10
1.0
0.1Kw
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Copyright
2002
11-06-2003 REV A
W
.Mi
cr
os
em
i
.C
O
M
SCOTTSD A L E DIVISION
1N5629 thru 1N5665A
1N
56
29
th
ru
1N
56
65
A
56
29
th
ru
1N
56
65
A
Breakdown
Voltage
V(BR) @ I(BR)
V
Min.
Max.
Min.
Max.
Breakdown
Current
Breakdown
Current
I(BR)
I
Rated
Standoff
Voltage
Rated
Standoff
Voltage
VWM
V
Maximum
Standby
Current
Standby
Current
ID @ VWM
I
Maximum
Clamping
Voltage
Maximum
Clamping
Voltage
VC @ IPP
V
Maximum
Peak
Pulse
Current
Maximum
Peak
Pulse
Current
IPP
I
Maximum
Temperature
Maximum
Temperature
Coefficient of V(BR)
αV(BR)
Coefficient of V
(BR) @ I(BR)
(BR)
WM
D @ VWM
C @ I
PP
(BR)
αV(BR)
JEDEC
Type
No.*
V
mA
V
A
V
A
%/
oC
1N5661
1N5661A
1N5662
1N5662A
135
143
144
152
165
158
176
168
1
121
128
130
136
5
215
207
230
219
7.0
7.2
6.5
6.8
.108
1N5663
1N5663A
1N5664
1N5664A
153
162
171
187
179
198
189
1
138
145
146
154
5
244
234
258
246
6.2
6.4
5.8
6.1
.108
1N5665
1N5665A
180
190
220
210
1
162
171
5
287
274
5.2
5.5
.108
* No suffix = 10% tolerance, suffix A = 5% tolerance. Suffix A also available in military qualified types with a JAN, JANTX, or JANTXV prefix.
NOTES: V(BR) is measured after I(BR) has been applied for < 300ms.
Forward voltage
VF at 100 amps peak 8.3 ms is 3.5 volts max.
SYMBOLS & DEFINITIONS
Symbol
Definition
VWM
Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1.)
V(BR)
Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25
oC
VC
Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the
peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise
due to both the series resistance and thermal rise and positive temperature coefficient (αV(BR))
IPP
Peak Pulse Current: The peak current during the impulse (See Figure 2)
PPP
Peak Pulse Power: The pulse power as determined by the product of VC and IPP
ID
Standby Current: The current at the standoff voltage (VWM)
I(BR)
Breakdown Current: The current used for measuring Breakdown Voltage (V(BR))
NOTE 1: A TVS is normally selected according to the rated “Standoff Voltage” VWM that should be equal to or greater than the dc or
continuous peak operating voltage level.
GRAPHS
100ns
1
s
10
s
100
s
1ms
10ms
Pulse
current
(I
P)
in
percent
of
I
PP
Square-wave pulse
Exponential wave-form
(See FIG. 2)
Peak
Pulse
P
ower
(P
PP
)i
n
K
w
Peak Value
IPP
Pulse time duration (tp) is
defined as that point where
IP decays to 50% of peak
value (IPP).
time (t) in milliseconds
Pulse Time (tp)
FIG. 2 Pulse wave form for exponential surge
FIG. 1 – Non-repetive peak pulse power rating curve
NOTE: Peak power defined as peak voltage times peak current
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5665A | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 171V 1.5KW 2-Pin DO-13 制造商:Microsemi Corporation 功能描述:DO-13 SD - Bulk |
| 1N5666 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Transient Absorption Zener |
| 1N5666A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Transient Absorption Zener |
| 1N567 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GOLD BONDED DIODES(Low forward voltage, low power consumption) |
| 1N568 | 制造商:Texas Instruments 功能描述: |
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