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參數資料
| 型號： | 1N5711#T25 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.015 A, SILICON, SIGNAL DIODE |
| 封裝： | GLASS PACKAGE-2 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 57K |
| 代理商： | 1N5711#T25 |
Schottky Barrier Diodes for
General Purpose Applications
Technical Data
Features
Low Turn-On Voltage
As Low as 0.34 V at 1 mA
Pico Second Switching Speed
High Breakdown Voltage
Up to 70 V
Matched Characteristics
Available
Description/Applications
The 1N5711, 1N5712, 5082-2800/
10/11 are passivated Schottky
barrier diodes which use a
patented “guard ring” design to
achieve a high breakdown
voltage. Packaged in a low cost
glass package, they are well suited
for high level detecting, mixing,
switching, gating, log or A-D
converting, video detecting,
frequency discriminating,
sampling, and wave shaping.
The 5082-2835 is a passivated
Schottky diode in a low cost glass
package. It is optimized for low
turn-on voltage. The 5082-2835 is
particularly well suited for the
UHF mixing needs of the CATV
marketplace.
The 5082-2300 Series and
5082-2900 devices are unpas-
sivated Schottky diodes in a glass
package. These diodes have
extremely low 1/f noise and are
ideal for low noise mixing, and
high sensitivity detecting. They
are particularly well suited for use
in Doppler or narrow band video
receivers.
1N5711
1N5712
5082-2300 Series
5082-2800 Series
5082-2900
0.41 (.016)
0.36 (.014)
25.4 (1.00)
MIN.
25.4 (1.00)
MIN.
1.93 (.076)
1.73 (.068)
CATHODE
DIMENSIONS IN MILLIMETERS AND (INCHES).
4.32 (.170)
3.81 (.150)
Outline 15
Maximum Ratings
Junction Operating and Storage Temperature Range
5082-2303, -2900 ................................................................. -60
°C to +100°C
1N5711, 1N5712, 5082-2800/10/11 .................................... -65
°C to +200°C
5082-2835 ............................................................................ -60
°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at T
CASE = 25°C)
Derate linearly to zero at maximum rated temperature
5082-2303, -2900 .............................................................................. 100 mW
1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW
5082-2835 ......................................................................................... 150 mW
Peak Inverse Voltage ................................................................................. V
BR
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5711-TAP | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 70V 2-Pin DO-35 Ammo |
| 1N5711-TR | 功能描述:肖特基二極管與整流器 15mA 70 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| 1N5711UB | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT |
| 1N5711UBCA | 制造商:Microsemi Corporation 功能描述: |
| 1N5711UBCC | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT |
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