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參數資料
型號: 1N5711UR-1
英文描述: SCHOTTKY BARRIER DIODES
中文描述: 肖特基勢壘二極管
文件頁數: 1/2頁
文件大小: 23K
代理商: 1N5711UR-1
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
CDI
MINIMUM
MAXIMUM
MAXIMUM REVERSE
MAXIMUM
TYPE
BREAKDOWN
FORWARD
LEAKAGE CURRENT
CAPACITANCE @
ESDS
NUMBER
VOLTAGE
V
R
= 0 VOLTS
CLASS
f = 1.0 MHZ
V
BR @ 10
AVF @ 1 mA
V
F @
I
F
1
R
@ V
R
C
T
VOLTS
VOLTS@mA
NA
VOLTS
PICO FARADS
1N5711UR-1
70
0.41
1.0 @ 15
200
50
2.0
1
1N5712UR-1
20
0.41
1.0@35
150
16
2.0
1
1N6857UR-1
20
0.35
0.75@ 35
150
16
4.5
2
1N6858UR-1
70
0.36
0.65 @ 15
200
50
4.5
2
CDLL2810
20
0.41
1.0 @ 35
100
15
2.0
1
CDLL5711
70
0.41
1.0 @ 15
200
50
2.0
1
CDLL5712
20
0.41
1.0 @ 35
150
16
2.0
1
CDLL6263
60
0.41
1.0 @ 15
200
50
2.2
1
CDLL6857
20
0.35
0.75 @ 35
150
16
4.5
2
CDLL6858
70
0.36
0.65 @ 15
200
50
4.5
2
NOTE:
Effective Minority Carrier Lifetime (
τ ) is 100 Pico Seconds
NOTICE:
Qualification testing to J, JX, JV and JS levels for 6857 and 6858 types is underway. Contact the
factory for qualification completion dates. These two part numbers are being introduced by CDI as
“drop-in” replacements for the 5711 and 5712. They provide a more robust mechanical design and
a higher ESDS class with the only trade-off being an increase in capacitance.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
D
1.60
1.70
0.063 0.067
F
0.41
0.55
0.016 0.022
G
3.30
3.70
.130
.146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZOJX): 40
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MAXIMUM RATINGS
Operating Temperature: -65°C to +150°C
Storage Temperature:
-65°C to +150°C
Operating Current:
5711 & 6263 TYPES
:33mA dc @ TEC = +140°C
2810, 5712 & 6858 Types
:75mA dc @ TEC = +130°C
6857 Types
:150mA dc @ TEC = +110°C
Derating:
:All Types: Derate to 0 (zero) mA dc @ +150°C
1N5711UR-1 AVAILABLE IN
JAN, JANTX, JANTXV and JANS
PER MIL-PRF-19500/444
1N5712UR-1 AVAILABLE IN
JAN, JANTX, JANTXV and JANS
PER MIL-PRF 19500/445
SCHOTTKY BARRIER DIODES
LEADLESS PACKAGE FOR SURFACE MOUNT
METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION
1N5711UR-1
1N5712UR-1
1N6857UR-1
1N6858UR-1
CDLL2810
CDLL5711
CDLL5712
CDLL6263
CDLL6857
CDLL6858
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PDF描述
1N5712UR-1 SCHOTTKY BARRIER DIODES
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相關代理商/技術參數
參數描述
1N5711UR-1_10 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SCHOTTKY BARRIER DIODES
1N5711UR-1JAN 制造商:Microsemi Corporation 功能描述:Diode Schottky 70V 0.033A 2-Pin DO-213AA 制造商:Microsemi 功能描述:Diode Schottky 70V 0.033A 2-Pin DO-213AA
1N5711UR-1JANTX 制造商:Microsemi Corporation 功能描述:
1N5711UR-1JANTXT/R 制造商:Microsemi Corporation 功能描述:Diode Schottky 70V 0.033A 2-Pin DO-213AA 制造商:Microsemi 功能描述:Diode Schottky 70V 0.033A 2-Pin DO-213AA
1N5711UR-1JANTXV-TR 制造商:Microsemi Corporation 功能描述:Diode Schottky 70V 0.033A 2-Pin DO-213AA T/R
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