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參數資料
型號: 1N6387
廠商: MOTOROLA INC
元件分類: TVS二極管 - 瞬態電壓抑制
英文描述: 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
封裝: PLASTIC, CASE 41A-02, 2 PIN
文件頁數: 1/6頁
文件大小: 56K
代理商: 1N6387
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Motorola TVS/Zener Device Data
4-1
500 Watt Peak Power Data Sheet
Devices listed in bold, italic are Motorola preferred devices.
1500 Watt MOSORB
GENERAL DATA APPLICABLE TO ALL SERIES IN
THIS GROUP
Zener Transient Voltage Suppressors
Unidirectional and Bidirectional
Mosorb devices are designed to protect voltage sensitive components from high volt-
age, high energy transients. They have excellent clamping capability, high surge capabili-
ty, low zener impedance and fast response time. These devices are Motorola’s exclusive,
cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use
in communication systems, numerical controls, process controls, medical equipment,
business machines, power supplies and many other industrial/consumer applications, to
protect CMOS, MOS and Bipolar integrated circuits.
Specification Features:
Standard Voltage Range — 6.2 to 250 V
Peak Power — 1500 Watts @ 1 ms
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 A Above 10 V
UL Recognition
Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
POLARITY: Cathode indicated by polarity band. When operated in zener mode, will be
positive with respect to anode
MOUNTING POSITION: Any
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Guadalajara, Mexico
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (1)
@ TL ≤ 25°C
PPK
1500
Watts
Steady State Power Dissipation
@ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C
PD
5
50
Watts
mW/
°C
Forward Surge Current (2)
@ TA = 25°C
IFSM
200
Amps
Operating and Storage Temperature Range
TJ, Tstg
– 65 to +175
°C
Lead temperature not less than 1/16
″ from the case for 10 seconds: 230°C
NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2.
NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
1N6373A
SERIES
MOSORB
ZENER OVERVOLTAGE
TRANSIENT
SUPPRESSORS
6.2–250 VOLTS
1500 WATT PEAK POWER
5 WATTS STEADY STATE
CASE 41A
PLASTIC
1500 WATT
PEAK POWER
相關PDF資料
PDF描述
1N4370ARL 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
1N4370CTA2 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
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1N4703CTA 16 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
1N4703 16 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
相關代理商/技術參數
參數描述
1N6388 制造商:Microsemi Corporation 功能描述:Diode TVS Single Bi-Dir 36V 1.5KW 2-Pin Case 1
1N6389 制造商:ON Semiconductor 功能描述:Diode TVS Single Bi-Dir 45V 1.5KW 2-Pin Case 41A-04
1N6391 制造商:Microsemi Corporation 功能描述:Diode Schottky 45V 25A 2-Pin DO-4 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER DO-4 LAW - Bulk 制造商:Microsemi 功能描述:Diode Schottky 45V 25A 2-Pin DO-4
1N6391_1 制造商:NAINA 制造商全稱:Naina Semiconductor ltd. 功能描述:Schottky Barrier Rectifier Diode
1N6391_10 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:HIGH RELIABILITY SCHOTTKY RECTIFIER
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